Effect of rapid thermal annealing on beryllium implanted p-type GaN

被引：9

作者：

Huang, HW ^{[1
]}

Kao, CC ^{[1
]}

Tsai, JY ^{[1
]}

Yu, CC ^{[1
]}

Chu, CF ^{[1
]}

Lee, JY ^{[1
]}

Kuo, SY ^{[1
]}

Lin, CF ^{[1
]}

Kuo, HC ^{[1
]}

Wang, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 107卷 / 03期

关键词：

RTA; beryllium; implantation; GaN; SSA; MSA;

D O I：

10.1016/j.mseb.2003.12.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100 degreesC for 15 s. Furthermore, with equal total isothermal time of 60 s, we compared the multiple step annealing (MSA) at 1100 degreesC for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100 degreesC, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：237 / 240

页数：4

共 29 条

[1] CCL4 DOPING OF GAN GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

ABERNATHY, CR ;

MACKENZIE, JD ;

PEARTON, SJ ;

HOBSON, WS .

APPLIED PHYSICS LETTERS, 1995, 66 (15) :1969-1971

[2] Theoretical evidence for efficient p-type doping of GaN using beryllium [J].

Bernardini, F ;

Fiorentini, V ;

Bosin, A .

APPLIED PHYSICS LETTERS, 1997, 70 (22) :2990-2992

[3] NATIVE DEFECTS IN GALLIUM NITRIDE [J].

BOGUSLAWSKI, P ;

BRIGGS, EL ;

BERNHOLC, J .

PHYSICAL REVIEW B, 1995, 51 (23) :17255-17258

[4] Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization [J].

Chu, CF ;

Yu, CC ;

Wang, YK ;

Tsai, JY ;

Lai, FI ;

Wang, SC .

APPLIED PHYSICS LETTERS, 2000, 77 (21) :3423-3425

[5] ULTRAVIOLET AND VIOLET LIGHT-EMITTING GAN DIODES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

GOLDENBERG, B ;

ZOOK, JD ;

ULMER, RJ .

APPLIED PHYSICS LETTERS, 1993, 62 (04) :381-383

[6] Nature of the 2.8 eV photoluminescence band in Mg doped GaN [J].

Kaufmann, U ;

Kunzer, M ;

Maier, M ;

Obloh, H ;

Ramakrishnan, A ;

Santic, B ;

Schlotter, P .

APPLIED PHYSICS LETTERS, 1998, 72 (11) :1326-1328

[7] GROWTH BY MOLECULAR-BEAM EPITAXY AND ELECTRICAL CHARACTERIZATION OF SI-DOPED ZINC BLENDE GAN FILMS DEPOSITED ON BETA-SIC COATED (001) SI SUBSTRATES [J].

KIM, JG ;

FRENKEL, AC ;

LIU, H ;

PARK, RM .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :91-93

[8] Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy [J].

Li, XB ;

Sun, DZ ;

Zhang, JP ;

Kong, MY ;

Yoon, SF .

APPLIED PHYSICS LETTERS, 1998, 72 (08) :936-938

[9] P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES [J].

LIN, ME ;

XUE, G ;

ZHOU, GL ;

GREENE, JE ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :932-933

[10] GROWTH OF GALLIUM NITRIDE BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY - THE ROLE OF CHARGED SPECIES [J].

MOLNAR, RJ ;

MOUSTAKAS, TD .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) :4587-4595

← 1 2 3 →