共 63 条
Beneficial Contribution of Alloy Disorder to Electron and Phonon Transport in Half-Heusler Thermoelectric Materials
被引:398
作者:

Xie, Hanhui
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机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Wang, Heng
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h-index: 0
机构:
CALTECH, Dept Mat Sci, Pasadena, CA 91125 USA Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Pei, Yanzhong
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h-index: 0
机构:
CALTECH, Dept Mat Sci, Pasadena, CA 91125 USA Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Fu, Chenguang
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h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Liu, Xiaohua
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h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Snyder, G. Jeffrey
论文数: 0 引用数: 0
h-index: 0
机构:
CALTECH, Dept Mat Sci, Pasadena, CA 91125 USA Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Zhao, Xinbing
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h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Zhu, Tiejun
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h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Peoples R China
[3] CALTECH, Dept Mat Sci, Pasadena, CA 91125 USA
关键词:
thermoelectrics;
charge transport;
alloys;
doping;
LATTICE THERMAL-CONDUCTIVITY;
FIGURE-OF-MERIT;
ENHANCEMENT;
SCATTERING;
PERFORMANCE;
EFFICIENCY;
STABILITY;
MASS;
D O I:
10.1002/adfm.201300663
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Electron and phonon transport characteristics determines the potential of thermoelectric materials for power generation or refrigeration. This work shows that, different from most of high performance thermoelectric materials with dominant acoustic phonon scattering, the promising ZrNiSn based half-Heusler thermoelectric solid solutions exhibit an alloy scattering dominated charge transport. A low deformation potential and a low alloy scattering potential are found for the solid solutions, which is beneficial to maintain a relatively high electron mobility despite of the large effective mass, and can be intrinsic favorable features contributing to the noticeably high power factors of ZrNiSn based alloys. A quantitive description of the different phonon scattering mechanisms suggests that the point defect scattering is the most important mechanism that determines the phonon transport process of the solid solutions. The present results indicate that alloying can be an effective approach for such materials systems to enhance thermoelectric figure of merit ZT by reducing phonon thermal conductivity, while minimizing the deterioration of charge mobility due to the low alloy scatteirng potential.
引用
收藏
页码:5123 / 5130
页数:8
相关论文
共 63 条
[51]
Increased electrical conductivity in fine-grained (Zr,Hf)NiSn based thermoelectric materials with nanoscale precipitates
[J].
Xie, Han-Hui
;
Yu, Cui
;
Zhu, Tie-Jun
;
Fu, Chen-Guang
;
Snyder, G. Jeffrey
;
Zhao, Xin-Bing
.
APPLIED PHYSICS LETTERS,
2012, 100 (25)

Xie, Han-Hui
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Yu, Cui
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Zhu, Tie-Jun
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Fu, Chen-Guang
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Snyder, G. Jeffrey
论文数: 0 引用数: 0
h-index: 0
机构:
CALTECH, Pasadena, CA 91125 USA Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Zhao, Xin-Bing
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[52]
Interrelation between atomic switching disorder and thermoelectric properties of ZrNiSn half-Heusler compounds
[J].
Xie, Han-Hui
;
Mi, Jian-Li
;
Hu, Li-Peng
;
Lock, Nina
;
Chirstensen, Mogens
;
Fu, Chen-Guang
;
Iversen, Bo Brummerstedt
;
Zhao, Xin-Bing
;
Zhu, Tie-Jun
.
CRYSTENGCOMM,
2012, 14 (13)
:4467-4471

Xie, Han-Hui
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310003, Zhejiang, Peoples R China Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark

Mi, Jian-Li
论文数: 0 引用数: 0
h-index: 0
机构:
Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark
Aarhus Univ, iNANO, DK-8000 Aarhus C, Denmark Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark

Hu, Li-Peng
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310003, Zhejiang, Peoples R China Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark

Lock, Nina
论文数: 0 引用数: 0
h-index: 0
机构:
Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark
Aarhus Univ, iNANO, DK-8000 Aarhus C, Denmark Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark

Chirstensen, Mogens
论文数: 0 引用数: 0
h-index: 0
机构:
Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark
Aarhus Univ, iNANO, DK-8000 Aarhus C, Denmark Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark

Fu, Chen-Guang
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310003, Zhejiang, Peoples R China Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark

Iversen, Bo Brummerstedt
论文数: 0 引用数: 0
h-index: 0
机构:
Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark
Aarhus Univ, iNANO, DK-8000 Aarhus C, Denmark Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark

Zhao, Xin-Bing
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310003, Zhejiang, Peoples R China Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark

Zhu, Tie-Jun
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310003, Zhejiang, Peoples R China Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus C, Denmark
[53]
Stronger phonon scattering by larger differences in atomic mass and size in p-type half-Heuslers Hf1-xTixCoSb0.8Sn0.2
[J].
Yan, Xiao
;
Liu, Weishu
;
Wang, Hui
;
Chen, Shuo
;
Shiomi, Junichiro
;
Esfarjani, Keivan
;
Wang, Hengzhi
;
Wang, Dezhi
;
Chen, Gang
;
Ren, Zhifeng
.
ENERGY & ENVIRONMENTAL SCIENCE,
2012, 5 (06)
:7543-7548

Yan, Xiao
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Liu, Weishu
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Wang, Hui
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Chen, Shuo
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Shiomi, Junichiro
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Mech Engn, Cambridge, MA 02139 USA
Univ Tokyo, Dept Mech Engn, Tokyo 113, Japan Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Esfarjani, Keivan
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Mech Engn, Cambridge, MA 02139 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Wang, Hengzhi
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Wang, Dezhi
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Chen, Gang
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Mech Engn, Cambridge, MA 02139 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

Ren, Zhifeng
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA
[54]
Enhanced Thermoelectric Figure of Merit of p-Type Half-Heuslers
[J].
Yan, Xiao
;
Joshi, Giri
;
Liu, Weishu
;
Lan, Yucheng
;
Wang, Hui
;
Lee, Sangyeop
;
Simonson, J. W.
;
Poon, S. J.
;
Tritt, T. M.
;
Chen, Gang
;
Ren, Z. F.
.
NANO LETTERS,
2011, 11 (02)
:556-560

Yan, Xiao
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Joshi, Giri
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Liu, Weishu
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Lan, Yucheng
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Wang, Hui
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Lee, Sangyeop
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Mech Engn, Cambridge, MA 02139 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Simonson, J. W.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Poon, S. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Tritt, T. M.
论文数: 0 引用数: 0
h-index: 0
机构:
Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Chen, Gang
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Mech Engn, Cambridge, MA 02139 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA

Ren, Z. F.
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[55]
Strain field fluctuation effects on lattice thermal conductivity of ZrNiSn-based thermoelectric compounds
[J].
Yang, J
;
Meisner, GP
;
Chen, L
.
APPLIED PHYSICS LETTERS,
2004, 85 (07)
:1140-1142

Yang, J
论文数: 0 引用数: 0
h-index: 0
机构:
GM Corp, R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA GM Corp, R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA

Meisner, GP
论文数: 0 引用数: 0
h-index: 0
机构: GM Corp, R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA

Chen, L
论文数: 0 引用数: 0
h-index: 0
机构: GM Corp, R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA
[56]
Influence of electron-phonon interaction on the lattice thermal conductivity of Co1-xNixSb3 -: art. no. 094115
[J].
Yang, J
;
Morelli, DT
;
Meisner, GP
;
Chen, W
;
Dyck, JS
;
Uher, C
.
PHYSICAL REVIEW B,
2002, 65 (09)
:1-5

Yang, J
论文数: 0 引用数: 0
h-index: 0
机构:
GM Corp, Mat & Proc Lab, R&D & Planning, Warren, MI 48090 USA GM Corp, Mat & Proc Lab, R&D & Planning, Warren, MI 48090 USA

Morelli, DT
论文数: 0 引用数: 0
h-index: 0
机构: GM Corp, Mat & Proc Lab, R&D & Planning, Warren, MI 48090 USA

Meisner, GP
论文数: 0 引用数: 0
h-index: 0
机构: GM Corp, Mat & Proc Lab, R&D & Planning, Warren, MI 48090 USA

Chen, W
论文数: 0 引用数: 0
h-index: 0
机构: GM Corp, Mat & Proc Lab, R&D & Planning, Warren, MI 48090 USA

Dyck, JS
论文数: 0 引用数: 0
h-index: 0
机构: GM Corp, Mat & Proc Lab, R&D & Planning, Warren, MI 48090 USA

Uher, C
论文数: 0 引用数: 0
h-index: 0
机构: GM Corp, Mat & Proc Lab, R&D & Planning, Warren, MI 48090 USA
[57]
Evaluation of Half-Heusler Compounds as Thermoelectric Materials Based on the Calculated Electrical Transport Properties
[J].
Yang, Jiong
;
Li, Huanming
;
Wu, Ting
;
Zhang, Wenqing
;
Chen, Lidong
;
Yang, Jihui
.
ADVANCED FUNCTIONAL MATERIALS,
2008, 18 (19)
:2880-2888

Yang, Jiong
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

Li, Huanming
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

Wu, Ting
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

Zhang, Wenqing
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

Chen, Lidong
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

Yang, Jihui
论文数: 0 引用数: 0
h-index: 0
机构:
Gen Motors R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[58]
MICROSTRUCTURE AND THERMOELECTRIC PROPERTIES OF (Zr,Hf)NiSn-BASED HALF-HEUSLER ALLOYS BY MELT SPINNING AND SPARK PLASMA SINTERING
[J].
Yu, Cui
;
Zhu, Tiejun
;
Xiao, Kai
;
Shen, Junjie
;
Zhao, Xinbing
.
FUNCTIONAL MATERIALS LETTERS,
2010, 3 (04)
:227-231

Yu, Cui
论文数: 0 引用数: 0
h-index: 0
机构: Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Zhu, Tiejun
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Xiao, Kai
论文数: 0 引用数: 0
h-index: 0
机构: Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Shen, Junjie
论文数: 0 引用数: 0
h-index: 0
机构: Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Zhao, Xinbing
论文数: 0 引用数: 0
h-index: 0
机构: Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[59]
Reduced Grain Size and Improved Thermoelectric Properties of Melt Spun (Hf,Zr)NiSn Half-Heusler Alloys
[J].
Yu, Cui
;
Zhu, Tie-Jun
;
Xiao, Kai
;
Shen, Jun-Jie
;
Yang, Sheng-Hui
;
Zhao, Xin-Bing
.
JOURNAL OF ELECTRONIC MATERIALS,
2010, 39 (09)
:2008-2012

Yu, Cui
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Zhu, Tie-Jun
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Xiao, Kai
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Shen, Jun-Jie
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Yang, Sheng-Hui
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Zhao, Xin-Bing
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[60]
High-performance half-Heusler thermoelectric materials Hf1-x ZrxNiSn1-ySby prepared by levitation melting and spark plasma sintering
[J].
Yu, Cui
;
Zhu, Tie-Jun
;
Shi, Rui-Zhi
;
Zhang, Yun
;
Zhao, Xin-Bing
;
He, Jian
.
ACTA MATERIALIA,
2009, 57 (09)
:2757-2764

Yu, Cui
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Zhu, Tie-Jun
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Shi, Rui-Zhi
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Zhang, Yun
论文数: 0 引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

Zhao, Xin-Bing
论文数: 0 引用数: 0
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

He, Jian
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机构:
Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China