On the better quality of wet-grown gate oxides

被引:3
作者
Bellutti, P [1 ]
Zorzi, N [1 ]
机构
[1] Inst Trentino Cultura, Microsyst Div, I-38050 Trent, Italy
关键词
D O I
10.1149/1.1390891
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The quality of the gate oxide grown by using both wet and dry oxidation has been studied with respect to the local oxidation atmosphere. Dedicated tests have shown that the difference between wet- and dry-grown gate oxide is strongly influenced by the previous local oxidation process. A superior quality of wet gate oxide is evident if wet local oxidation has been used, while negligible dependence of gate oxide quality on the gate oxidation ambient is obtained when dry local oxidation is applied. (C) 1999 The Electrochemical Society. S1099-0062(99)03-110-7-X. All rights reserved.
引用
收藏
页码:525 / 526
页数:2
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