Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

被引：1
|
作者：
Kuang, Y. J. [1 ]
Tu, C. W. [2 ]
机构：
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 120卷 / 02期
基金：
美国国家科学基金会;
关键词：
GAAS; SI; PHOTOLUMINESCENCE; NANOWIRES; GAINNAS; DIODES; LIMITS;
D O I：
10.1007/s00339-015-9228-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the Si doping efficiency in dilute nitride GaNAs by gas-source molecular beam epitaxy across a substrate temperature range from 460 to 570 A degrees C. Particularly, for samples grown at similar to 480 A degrees C, the doping efficiency changes drastically from 100 to almost 0 % as the N compositions varies from 0 to 3.1 %. By comparing experimental data to Monte Carlo simulation of N adatom surface diffusion during growth, the change in doping efficiency is believed to be due to passivation of Si dopants by N during epitaxy.
引用
收藏
页码：635 / 639
页数：5
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