Oxide Electric-Double-Layer Transistors Gated by a Chitosan-Based Biopolymer Electrolyte

被引：19
|
作者：
Chao, Jin Yu [1 ,2 ]
Zhu, Li Qiang [1 ,2 ]
Xiao, Hui [1 ,2 ]
Yuan, Zhi Guo [1 ,2 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[2] North Univ China, Shanxi Prov Key Lab High Grav Chem Engn, Taiyuan 030051, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Proton gating; electric-double-layer transistor; DEVICES;
D O I：
10.1109/LED.2015.2445333
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Indium-zinc-oxide (IZO) electric-double-layer transistors are fabricated on proton conducting chitosan-based biopolymer electrolyte. Due to the extremely strong proton gating originated from proton migration within the chitosan films, good electrical performances are obtained. Characteristic time for the proton gating is estimated to be on the order of several milliseconds. Furthermore, a resistor loaded inverter is built, showing a high-voltage gain of similar to 9 at a low supply voltage of 1.2 V. The proton-gated IZO transistors may find potential applications in portable electronics and synaptic electronics.
引用
收藏
页码：799 / 801
页数：3
相关论文
共 50 条
  • [21] A surface-potential-based electrical model for amorphous InGaZnO electric-double-layer transistors with electrolyte insulation
    Xu, Piao-Rong
    Zeng, Qing-Min
    Wang, Lu
    Cai, Min-Xi
    Liu, E-Xian
    Liu, Gen-Hua
    Shan, Zheng-Ping
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2025, 100
  • [22] Li-doping-modulated gelatin electrolyte for biodegradable electric-double-layer synaptic transistors
    Chen, Zhengquan
    He, Gang
    Yang, Bing
    Zhu, Minmin
    Jiang, Shanshan
    AIP ADVANCES, 2024, 14 (02)
  • [23] Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes
    Dou, Wei
    Sun, Jia
    Jiang, Jie
    Lu, Aixia
    Wan, Qing
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (11)
  • [24] Electric-double-layer transistors for synaptic devices and neuromorphic systems
    He, Yongli
    Yang, Yi
    Nie, Sha
    Liu, Rui
    Wan, Qing
    JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (20) : 5336 - 5352
  • [25] Modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors
    Dai, Mingzhi
    Wu, Guodong
    Yang, Yue
    Huang, Jin
    Li, Li
    Gong, Jun
    Wan, Qing
    APPLIED PHYSICS LETTERS, 2011, 98 (15)
  • [26] Weak localization in electric-double-layer gated few-layer graphene
    Gonnelli, R. S.
    Piatti, E.
    Sola, A.
    Tortello, M.
    Dolcini, F.
    Galasso, S.
    Nair, J. R.
    Gerbaldi, C.
    Cappelluti, E.
    Bruna, M.
    Ferrari, A. C.
    2D MATERIALS, 2017, 4 (03):
  • [27] Exploration of Nafion for the Electric-Double-Layer Gating of Metal-Oxide Thin Film Transistors
    Mou, Peng-Lin
    Huang, Wan-Qing
    Yan, Feng-Jie
    Wan, Xi
    Shao, Feng
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (02)
  • [28] Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphorosilicate Glass Electrolyte
    周菊枚
    高晓红
    张洪亮
    Chinese Physics Letters, 2015, 32 (03) : 153 - 156
  • [29] Humidity Stability of All-Sputtered Metal-Oxide Electric-Double-Layer Transistors
    Wei, Li
    Huang, Wanqing
    Fang, Xiaoli
    Wang, Xinchi
    Mou, Penglin
    Shao, Feng
    Gu, Xiaofeng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5532 - 5536
  • [30] Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphorosilicate Glass Electrolyte
    周菊枚
    高晓红
    张洪亮
    Chinese Physics Letters, 2015, (03) : 153 - 156
12345