Oxide Electric-Double-Layer Transistors Gated by a Chitosan-Based Biopolymer Electrolyte

被引：19

作者：

Chao, Jin Yu ^{[1
,2
]}

Zhu, Li Qiang ^{[1
,2
]}

Xiao, Hui ^{[1
,2
]}

Yuan, Zhi Guo ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] North Univ China, Shanxi Prov Key Lab High Grav Chem Engn, Taiyuan 030051, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Proton gating; electric-double-layer transistor; DEVICES;

D O I：

10.1109/LED.2015.2445333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium-zinc-oxide (IZO) electric-double-layer transistors are fabricated on proton conducting chitosan-based biopolymer electrolyte. Due to the extremely strong proton gating originated from proton migration within the chitosan films, good electrical performances are obtained. Characteristic time for the proton gating is estimated to be on the order of several milliseconds. Furthermore, a resistor loaded inverter is built, showing a high-voltage gain of similar to 9 at a low supply voltage of 1.2 V. The proton-gated IZO transistors may find potential applications in portable electronics and synaptic electronics.

引用

页码：799 / 801

页数：3

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