Temperature dependence of electrical conduction in Pb(Zr,Ti)O3 thin films

The temperature dependence of electrical conduction in lead-zirconate-titanate (PZT) thin film about 470 nm thickness has been investigated. The conduction mechanism below 150 kV/cm is ohmic. For larger electric fields (> 150 kV/cm), it is found that the extracted dynamic dielectric constant is larger than the reported value if Poole-Frenkel emission method is assumed. While the extracted dynamic dielectric constant is smaller than the reported value if Schottky emission model is assumed. Plots of the temperature dependence of these conduction mechanisms showed that the Poole-Frenkel emission is the more reasonable conduction mechanism above 323 K. The carrier mobility (mu) extracted from Poole-Frenkel emission lies in the range from 2.3 x 10(-2) to 3.1 x 10(-4) cm(2) /V.s. Below 323 K, the conduction current is more likely due to Fowler-Nordheim tunneling above an electric field of 250 kV/cm.