A study of monitoring hydrogen using mesoporous TiO2 synthesized by anodization

被引:17
|
作者
Moon, Jongyun [1 ]
Hedman, Hannu-Pekka [1 ]
Kemell, Marianna [2 ]
Suominen, Arho [1 ]
Makila, Ermei [3 ]
Kim, Hong [4 ]
Tuominen, Aulis [5 ]
Punkkinen, Risto [1 ]
机构
[1] Univ Turku, Dept Informat Technol, FI-20014 Turku, Finland
[2] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland
[3] Univ Turku, Dept Phys, FI-20014 Turku, Finland
[4] Hoseo Univ, Dept Safety & Hlth Engn, Asan 337850, South Korea
[5] Univ Turku, FI-20014 Turku, Finland
关键词
TiO2; Anodization; Hydrogen; Gas sensor; OXIDE-FILMS; SENSOR;
D O I
10.1016/j.snb.2013.05.070
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We present a hydrogen sensor using mesoporous TiO2 film on silicon and its H-2 sensing properties at different conditions. The sensor was formed by anodizing a sputtered Ti layer on silicon and having it annealed for crystallization. The material and electrical characterization included a study of morphology (FESEM), elemental composition (EDS), crystalline structure (XRD) and current-voltage behavior (semiconductor parameter analyzer). The sensor with Pt electrodes showed promising hydrogen sensing properties in air, such as good response to low hydrogen concentration (20-1000 ppm), fast response time of 5 s and recovery time of 125 s at 1000 ppm. The sensor response is shown to be independent toward relative humidity in the testing atmosphere. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:246 / 250
页数:5
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