Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers

被引：2

作者：

Klein, P. B. ^{[1
]}

Caldwell, J. D. ^{[2
]}

Shrivastava, Amitesh ^{[3
]}

Sudarshan, T. S. ^{[3
]}

机构：

[1] USN, Res Lab, Code 6877, Washington, DC 20375 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

carrier lifetime; defects; carrier dynamics; recombination; photoluminescence; free carrier absorption; microwave photoconductivity; SEMICONDUCTORS;

D O I：

10.4028/www.scientific.net/MSF.600-603.489

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of measurement technique and measurement conditions (injection level, temperature) on the measured carrier lifetimes in n(-) 4H-SiC epilayers are investigated. For three optical measurement techniques, it is shown that the high and low injection lifetimes can vary dramatically. Differences in the lifetime for varying injection level and temperature are approached both experimentally and via carrier dynamics simulations, assuming Z(1)/Z(2) as the dominant defect. Reasonable agreement between measured and calculated behavior is obtained, as is insight into the recombination kinetics associated with the lifetime limiting defect.

引用

页码：489 / +

页数：2

共 10 条

[1] Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation [J].