A silicon-germanium receiver for X-band transmit/receive radar modules

被引：54

作者：

Comeau, Jonathan P. ^{[1
]}

Morton, Matthew A. ^{[1
]}

Kuo, Wei-Min Lance ^{[1
]}

Thrivikraman, Tushar ^{[1
]}

Andrews, Joel M. ^{[1
]}

Grens, Curtis M. ^{[1
]}

Cressler, John D. ^{[1
]}

Papapolymerou, John ^{[1
]}

Mitchell, Mark ^{[2
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30308 USA

[2] Georgia Tech Res Inst, Atlanta, GA 30332 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2008年 / 43卷 / 09期

关键词：

phased array; radar; receiver; SiGe; silicon-germanium; transmit/receive module; T/R module;

D O I：

10.1109/JSSC.2008.2002335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work investigates the potential of commercially-available silicon-germanium (SiGe) BiCMOS technology for X-band transmit/receive (T/R) radar modules, focusing on the receiver section of the module. A 5-bit receiver operating from 8 to 10.7 GHz is presented, demonstrating a gain of 11 dB, and average noise figure of 4.1 dB, and an input-referred third-order intercept point (IIP3) of - 13 dBm, while only dissipating 33 mW of power. The receiver is capable of providing 32 distinct phase states from 0 to 360 degrees, with an rms phase error < 9 degrees and an rms gain error < 0.6 dB. This level of circuit performance and integration capability demonstrates the benefits of SiGe BiCMOS technology for emerging radar applications, making it an excellent candidate for integrated X-band phased-array radar transmit/receive modules.

引用

页码：1889 / 1896

页数：8

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