A silicon-germanium receiver for X-band transmit/receive radar modules

被引:55
作者
Comeau, Jonathan P. [1 ]
Morton, Matthew A. [1 ]
Kuo, Wei-Min Lance [1 ]
Thrivikraman, Tushar [1 ]
Andrews, Joel M. [1 ]
Grens, Curtis M. [1 ]
Cressler, John D. [1 ]
Papapolymerou, John [1 ]
Mitchell, Mark [2 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30308 USA
[2] Georgia Tech Res Inst, Atlanta, GA 30332 USA
关键词
phased array; radar; receiver; SiGe; silicon-germanium; transmit/receive module; T/R module;
D O I
10.1109/JSSC.2008.2002335
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work investigates the potential of commercially-available silicon-germanium (SiGe) BiCMOS technology for X-band transmit/receive (T/R) radar modules, focusing on the receiver section of the module. A 5-bit receiver operating from 8 to 10.7 GHz is presented, demonstrating a gain of 11 dB, and average noise figure of 4.1 dB, and an input-referred third-order intercept point (IIP3) of - 13 dBm, while only dissipating 33 mW of power. The receiver is capable of providing 32 distinct phase states from 0 to 360 degrees, with an rms phase error < 9 degrees and an rms gain error < 0.6 dB. This level of circuit performance and integration capability demonstrates the benefits of SiGe BiCMOS technology for emerging radar applications, making it an excellent candidate for integrated X-band phased-array radar transmit/receive modules.
引用
收藏
页码:1889 / 1896
页数:8
相关论文
共 22 条
[1]  
Andrews J, 2007, IEEE MTT S INT MICR, P816
[2]  
[Anonymous], 2003, SILICON GERMANIUM HE
[3]  
Billström N, 2004, 34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, P1029
[4]  
Brookner E., 2007, P IEEE C RAD, P37
[5]  
CLARK G, 2005, P GOMACTECH 05 APR, P131
[6]   A monolithic 5-bit SiGeBiCMOS receiver for X-band phased-array radar systems [J].
Comeau, Jonathan P. ;
Morton, Matt A. ;
Kuo, Wei-Min Lance ;
Thrivikraman, Tushar ;
Andrews, Joel M. ;
Grens, Curtis ;
Cressler, John D. ;
Papapolymerou, John ;
Mitchell, Mark .
PROCEEDINGS OF THE 2007 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2007, :172-+
[7]   A high-linearity 5-bit, X-band SiGe HBT phase shifter [J].
Comeau, Jonathan P. ;
Morton, Matt A. ;
Cressler, John D. ;
Papapolymerou, John ;
Mitchell, Mark .
2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :1668-+
[8]   Design and layout techniques for the optimization of nMOS SPDT series-shunt switches in a 130nm SiGeBiCMOS technology [J].
Comeau, Jonathan P. ;
Cressler, John D. ;
Mitchell, Mark .
2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2007, :457-+
[9]  
ENDER JHG, 2004, P 34 EUR MICR C OCT, V3, P1509
[10]   BROAD-BAND DIODE PHASE SHIFTERS [J].
GARVER, RV .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1972, MT20 (05) :314-&