A fully integrated and high linearity UWB LNA implemented with current-reused technique and using single-biasing voltage

被引：0
|
作者：
Yang, Chin-Lung [1 ]
Hsieh, Wei-Lin [1 ]
Chiang, Yi-Chyun [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
来源：
2007 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES | 2007年
关键词：
CMOS; ultra-wideband (UWB); low-noise amplifier (LNA); miller effect; shunt-shunt feedback;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-mu m technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10dB power gain, 3.9dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9mA from a 1.8V power supply.
引用
收藏
页码：48 / 51
页数：4
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