Design and Analysis of FBAR switches for RF Front-End Mobile Terminal

被引:0
|
作者
Chawla, Paras [1 ]
Khanna, Rajesh [2 ]
Gupta, Neeraj [1 ]
机构
[1] Kurukshetra Univ, KITM, Kurukshetra, Haryana, India
[2] Thapar Univ, Patiala, Punjab, India
来源
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年
关键词
FBAR; pull in voltage; BAW; RF-MEMS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an introduction and overview of MEMS technology with a focus on RF applications of MEMS in the design of mobile terminal are presented. Such RF MEMS switches have displayed excellent RF characteristics, including lower insertion loss, higher isolation, zero power consumption, small size and weight and very low intermodulation distortion, and long battery life. It is desirable for a single device to access the additional several services like DCS, PCS, GSM, EGSM, CDMA, WCDMA, GPS, Wi-Fi, WiMAX, UMTS, Bluetooth, 802.11a, and 802.11b bands at anytime and anyplace has lead to the current efforts towards integration of different wireless access technologies. It is shown in this paper that the application of Film bulk acoustic resonator switches in reconfigurable and adaptive RF front end section promises an increase in efficiency and sensitivity, and a reduction in size as well as cost of future mobile phones. The reconfigurability is achieved through FBAR based switches which is integrated on various section of next generation mobile terminal. So, in this paper FBAR switches for RF front-end mobile terminal are designed and analysis.
引用
收藏
页码:394 / 397
页数:4
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