Effect of the AIN nucleation layer growth on AlN material quality

被引：81

作者：

Reentilae, O. ^{[1
]}

Brunner, F. ^{[1
]}

Knauer, A. ^{[1
]}

Mogilatenko, A. ^{[2
,3
]}

Neumann, W. ^{[2
,3
]}

Protzmann, H.

Heuken, M.

Kneissl, M. ^{[1
,4
]}

Weyers, M. ^{[1
]}

Traenkle, G. ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

[2] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

[3] AIXTRON AG, D-52072 Aachen, Germany

[4] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

High-resolution X-ray diffraction; Metalorganic vapor-phase epitaxy; Aluminum nitride; Nitrides;

D O I：

10.1016/j.jcrysgro.2008.07.083

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlN layers were grown by metalorganic vapor-phase epitaxy at high temperatures up to 1500 degrees C. Nucleation layer growth parameters and flow conditions before nucleation were changed and the effect on the AlN layer grown on top was studied. Structural analysis performed by high-resolution X-ray diffractometry and transmission electron microscopy showed that pregrowth conditions affect the material quality drastically. The best structural quality as indicated by a screw (including mixed) dislocation density of 8 x 10(8) cm(-2), together with smooth surface morphology was found to result from simultaneous switching on of ammonia and TMAl at the beginning of nucleation layer growth. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4932 / 4934

页数：3

共 11 条

[1] High-temperature growth of AlN in a production scale 11x2" MOVPE reactor [J].

Brunner, F. ;

Protzmann, H. ;

Heuken, M. ;

Knauer, A. ;

Weyers, M. ;

Kneissl, M. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :1799-+

[2] X-ray diffraction analysis of the defect structure in epitaxial GaN [J].

Heinke, H ;

Kirchner, V ;

Einfeldt, S ;

Hommel, D .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2145-2147

[3] Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy [J].

Imura, M. ;

Nakano, K. ;

Kitano, T. ;

Fujimoto, N. ;

Narita, G. ;

Okada, N. ;

Balakrishnan, K. ;

Iwaya, M. ;

Kamiyama, S. ;

Amano, H. ;

Akasaki, I. .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[4] Annihilation mechanism of threading dislocations in AlN grown by growth form modification, method using V/III ratio [J].

Imura, Masataka ;

Fujimoto, Naoki ;

Okada, Narihito ;

Balakrishnan, Krishnan ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Noro, Tadashi ;

Takagi, Takashi ;

Bandoh, Akira .

JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) :136-140

[5] Ultraviolet light-emitting diodes based on group three nitrides [J].

Khan, Asif ;

Balakrishnan, Krishnan ;

Katona, Tom .

NATURE PHOTONICS, 2008, 2 (02) :77-84

[6] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ALN OVER SAPPHIRE SUBSTRATES [J].

KHAN, MA ;

KUZNIA, JN ;

SKOGMAN, RA ;

OLSON, DT ;

MACMILLAN, M ;

CHOYKE, WJ .

APPLIED PHYSICS LETTERS, 1992, 61 (21) :2539-2541

[7] Growth of high-quality AlN, GaN and AlGaN with atomically smooth surfaces on sapphire substrates [J].

Ohba, Y ;

Yoshida, H ;

Sato, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1565-L1567

[8] Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification [J].

Okada, N. ;

Kato, N. ;

Sato, S. ;

Sumii, T. ;

Nagai, T. ;

Fujimoto, N. ;

Imura, M. ;

Balakrishnan, K. ;

Iwaya, M. ;

Kamiyama, S. ;

Amano, H. ;

Akasaki, I. ;

Maruyama, H. ;

Takagi, T. ;

Noro, T. ;

Bandoh, A. .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) :349-353

[9] Two-step process for the metalorganic chemical vapor deposition growth of high quality AlN films on sapphire [J].

Paduano, Q ;

Weyburne, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4A) :1590-1591

[10] Mosaic structure in epitaxial thin films having large lattice mismatch [J].

Srikant, V ;

Speck, JS ;

Clarke, DR .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4286-4295

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