Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures

被引：18

作者：

Zhu, Hui ^{[1
]}

Zhang, Yingqiao ^{[1
]}

Jiang, Anquan ^{[2
]}

Bai, Zilong ^{[2
]}

Feng, Shiwei ^{[1
]}

Wang, Pengfei ^{[1
]}

Meng, Xiao ^{[1
]}

Qi, Qiong ^{[3
]}

机构：

[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

[2] Fudan Univ, Coll Microelect, Shanghai 200433, Peoples R China

[3] Chinese Acad Sci, Natl Engn Res Ctr Optoelect Devices, Inst Semicond, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 25期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

TITANATE THIN-FILMS; LEAKAGE CURRENT; MEMORY; RESISTANCE;

D O I：

10.1063/1.4972302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the resistive switching of Au/BiFeO3/SrRuO3 structures. Their current-voltage characteristics complied with space-charge-limited (SCL) conduction. A full cycle of the poling process enlarged the I-V hysteresis and increased the transition voltage from Ohmic to SCL for an I-V sweeping bias less than the coercive voltage. A cycle of poling could increase the resistance switching ratio under low bias by 20 times over that of a virgin sample without poling. Measurements of thermally stimulated current showed a difference between the sample in the pristine state and that under the polarization state, indicating a relationship between the trap filling status and the resistive switching behavior. Published by AIP Publishing.

引用

页数：4

共 26 条

[1] Photoconductivity in BiFeO3 thin films [J].

Basu, S. R. ;

Martin, L. W. ;

Chu, Y. H. ;

Gajek, M. ;

Ramesh, R. ;

Rai, R. C. ;

Xu, X. ;

Musfeldt, J. L. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[2] Persistent Photoconductivity in Strained Epitaxial BiFeO3 Thin Films [J].

Bhatnagar, Akash ;

Kim, Young Heon ;

Hesse, Dietrich ;

Alexe, Marin .

NANO LETTERS, 2014, 14 (09) :5224-5228

[3] Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates [J].

Chen, Xinman ;

Wu, Guangheng ;

Zhang, Hailei ;

Qin, Ni ;

Wang, Tao ;

Wang, Feifei ;

Shi, Wangzhou ;

Bao, Dinghua .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 100 (04) :987-990

[4] Flexible Hybrid Organic-Inorganic Perovskite Memory [J].

Gu, Chungwan ;

Lee, Jang-Sik .

ACS NANO, 2016, 10 (05) :5413-5418

[5] Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies [J].

Hauser, A. J. ;

Zhang, J. ;

Mier, L. ;

Ricciardo, R. A. ;

Woodward, P. M. ;

Gustafson, T. L. ;

Brillson, L. J. ;

Yang, F. Y. .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

[6] Impedance spectroscopy of TiO2 thin films showing resistive switching [J].

Jeong, Doo Seok ;

Schroeder, Herbert ;

Waser, Rainer .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[7] A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors [J].

Jiang, An Quan ;

Wang, Can ;

Jin, Kui Juan ;

Liu, Xiao Bing ;

Scott, James F. ;

Hwang, Cheol Seong ;

Tang, Ting Ao ;

Bin Lu, Hui ;

Yang, Guo Zhen .

ADVANCED MATERIALS, 2011, 23 (10) :1277-+

[8] Temperature dependence of the current conduction mechanisms in ferroelectric Pb(Zr0.53,Ti0.47)O3 thin films [J].

Juan, TPC ;

Chen, SM ;

Lee, JYM .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (06) :3120-3125

[9] Space-charge-limited leakage current characteristics influenced by field-dependent permittivity in high dielectric constant and ferroelectric thin films [J].

Li, Jiantong ;

Dong, Xianlin ;

Chen, Ying ;

Zhang, Yuanyuan .

APPLIED PHYSICS LETTERS, 2006, 88 (21)

[10] Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM [J].

Liu, Qi ;

Sun, Jun ;

Lv, Hangbing ;

Long, Shibing ;

Yin, Kuibo ;

Wan, Neng ;

Li, Yingtao ;

Sun, Litao ;

Liu, Ming .

ADVANCED MATERIALS, 2012, 24 (14) :1844-1849

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