Simulation study on FinFET with tri-material gate

被引：0
|
作者：
Li, Cong [1 ]
Zhuang, Yiqi [1 ]
Zhang, Li [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源：
2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC) | 2012年
关键词：
FinFET; numerical simulation; tri-material gate; short-channel effects; hot-carrier effects;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a novel tri-material gate (TMG) FinFET device is proposed. Using three-dimensional (3-D) device simulator, hot-carrier effects and short-channel effects of TMG FinFET are investigated and compared with that of dual-material gate FinFET and conventional FinFET. Numerical simulation results shows that TMG FinFET exhibits significantly improved performance in terms of surface potential, electric field and carrier velocity distribution.
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页数：3
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