Thermal emission of holes from confined levels in strained SiGe channel p-MOSFETS

被引：1

作者：

GamezCuatzin, H ^{[1
]}

Marchand, JJ ^{[1
]}

Bremond, G ^{[1
]}

Garchery, L ^{[1
]}

Campidelli, Y ^{[1
]}

Berenguer, M ^{[1
]}

机构：

[1] FRANCE TELECOM,CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

THIN SOLID FILMS | 1997年 / 294卷 / 1-2期

关键词：

SiGe; band offset; carrier confinement; p-MOSFET;

D O I：

10.1016/S0040-6090(96)09223-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report preliminary results of current transient spectroscopy (CTS) investigations performed on a buried strained Si0.85Ge0.15 channel p-MOSFET structure. Measurements give an activation energy E-a = 83 +/- 10 meV. In these structures the fundamental confined level energy E-0 = 69 meV. We propose that the above activation energy corresponds to thermal emission of holes from E-0 since the summation E-a + E-0 = 152 +/- 20 meV is in good agreement with the measured valence band discontinuity (Delta E-v) values reported in the literature.

引用

页码：211 / 213

页数：3

共 16 条

[1] High speed P-type SiGe modulation-doped field-effect transistors [J].

Arafa, M ;

Fay, P ;

Ismail, K ;

Chu, JO ;

Meyerson, BS ;

Adesida, I .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) :124-126

[2]

BENHAMIDA A, 1995, THESIS INSA LYON FRA

[3]

Blood P., 1992, ELECT CHARACTERISATI

[4]

BREMOND G, 1994, MATER SCI FORUM, V143-, P495, DOI 10.4028/www.scientific.net/MSF.143-147.495

[5]

CHRETIEN O, 1995, J APPL PHYS, V78, P1

[6]

Garchery L, 1995, MATER RES SOC SYMP P, V379, P333, DOI 10.1557/PROC-379-333

[7]

GARCHERY L, 1996, UNPUB

[8]

GLOWACKI F, 1994, MATER RES SOC SYMP P, V342, P69, DOI 10.1557/PROC-342-69

[9] ELECTRON TRAPPING KINETICS AT DISLOCATIONS IN RELAXED GE0.3SI0.7/SI HETEROSTRUCTURES [J].

GRILLOT, PN ;

RINGEL, SA ;

FITZGERALD, EA ;

WATSON, GP ;

XIE, YH .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3248-3256

[10] CAPACITANCE AND CONDUCTANCE DEEP LEVEL TRANSIENT SPECTROSCOPY IN FIELD-EFFECT TRANSISTORS [J].

HAWKINS, ID ;

PEAKER, AR .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :227-229

← 1 2 →