Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field

被引：113

作者：

Li, Bin ^{[1
]}

Roschewsky, Niklas ^{[1
,2
]}

Assaf, Badih A. ^{[3
]}

Eich, Marius ^{[1
]}

Epstein-Martin, Marguerite ^{[1
,4
]}

Heiman, Don ^{[3
]}

Muenzenberg, Markus ^{[2
]}

Moodera, Jagadeesh S. ^{[1
,5
]}

机构：

[1] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA

[2] Univ Gottingen, Inst Phys 1, D-37077 Gottingen, Germany

[3] Northeastern Univ, Dept Phys, Boston, MA 02115 USA

[4] Spence Sch, New York, NY 10128 USA

[5] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 09期

基金：

美国国家科学基金会;

关键词：

ALUMINUM FILMS; IMPURITIES; TRANSITION; LAYER; AL;

D O I：

10.1103/PhysRevLett.110.097001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing that an infinite magnetoresistance can be produced by tuning the internal exchange field at the FI/S interface. This proximity effect at the interface can be suppressed by an Al2O3 barrier as thin as 0.3 nm, showing the extreme confinement of the interaction to the interface giving rise to the demonstrated phenomena. DOI: 10.1103/PhysRevLett.110.097001

引用

页数：5

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