Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

被引：23
|
作者：
Wang, Zhuo [1 ]
Samaraweera, R. L. [1 ]
Reichl, C. [2 ]
Wegscheider, W. [2 ]
Mani, R. G. [1 ]
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] ETH, Lab Festkorperphys, CH-8093 Zurich, Switzerland
来源：
SCIENTIFIC REPORTS | 2016年 / 6卷
关键词：
ZERO-RESISTANCE STATES; ELECTROMAGNETIC-WAVE EXCITATION; LOCALIZATION; TRANSPORT;
D O I：
10.1038/srep38516
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Electron-heating induced by a tunable, supplementary dc-current (I-dc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing I-dc, yielding negative giant-magnetoresistance at the lowest temperature and highest I-dc. A two-term Drude model successfully fits the data at all I-dc and T. The results indicate that carrier heating modifies a conductivity correction sigma(1), which undergoes sign reversal from positive to negative with increasing Idc, and this is responsible for the observed crossover from positive-to negative-magnetoresistance, respectively, at the highest B.
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页数：9
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