Microstructure and crystal imperfections of nanosized CdSxSe1-x thermally evaporated thin films

被引：97

作者：

Akl, Alaa A. ^{[1
]}

Hassanien, A. S. ^{[2
]}

机构：

[1] Shagra Univ, Fac Sci Ad Dawadmi, Dept Phys, Blonde 11911, Saudi Arabia

[2] Benha Univ, Fac Engn Shoubra, Engn Math & Phys Dept, Banha, Egypt

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 85卷

关键词：

Thin films; Physical vapor deposition (PVD); Energy dispersive analysis of X-rays (EDAX); Defects; Microstructure; OPTICAL CHARACTERIZATION; LATTICE-PARAMETER; MICROSTRAIN; SUBSTRATE; STRESS; SE;

D O I：

10.1016/j.spmi.2015.05.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Cadmium sulfoselenide CdSxSe1-x thin films were thermally evaporated onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at approximate to 2.5 nm/s and 375 +/- 5 nm, respectively. Microstructure and crystal imperfections of deposit CdSxSe1-x thin films were studied using X-ray diffraction (XRD) and energy dispersive analysis by X-ray (EDAX). XRD analysis reveals the formation of films have the semi-crystalline nature and the hexagonal structure with preferential < 002 > direction. The microstructural parameters such as, lattice parameters, the crystallite size (D), microstrain <epsilon >, residual internal stress (S), dislocation density (delta) and number of crystallite per unit volume (N) were calculated and found to be dependent upon the composition. The presence percentage of Cd, S and Se elements in the chalcogenide CdSxSe1-x thin films were estimated by EDAX and a comparative study with other similar samples of the previous literature was discussed. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：67 / 81

页数：15

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