(Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties

被引：0

作者：

Lukasiewicz, M. I. ^{[1
]}

Witkowski, B. S. ^{[1
]}

Wachnicki, L. ^{[1
]}

Kopalko, K. ^{[1
]}

Gieraltowska, S. ^{[1
]}

Wittlin, A. ^{[1
]}

Jaworski, M. ^{[1
]}

Guziewicz, E. ^{[1
]}

Godlewski, M. ^{[1
,2
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Cardinal S Wyszynski Univ, Coll Sci, Dept Math & Nat Sci, PL-01815 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2011年 / 120卷 / 6A期

关键词：

TEMPERATURE; FERROMAGNETISM;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.

引用

页码：A34 / A36

页数：3

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