Significant effects of As ion implantation on Si-selective epitaxy by ultrahigh vacuum chemical vapor deposition

被引：8

作者：

Furukawa, T ^{[1
]}

Nakahata, T ^{[1
]}

Maruno, S ^{[1
]}

Tokuda, Y ^{[1
]}

Satoh, S ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9A期

关键词：

epitaxial growth; ion implantation; XPS; UHV-CVD; MOSFET; LSI;

D O I：

10.1143/JJAP.38.5046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relation between As ion implantation and Si-selective epitaxy is investigated, taking account of the application of ultrahigh vacuum chemical vapor deposition to LSI devices. For a non-implanted wafer, undesirable island-like growth occurred because oxygen was introduced into the Si substrate by previous etching processes. The implantation of a sufficient dosage of As ions restored layer-by-layer growth with excellent surface morphology, which is explained in terms of the removal of the disturbed layer by the additional sputtering effect of ion implantation.

引用

页码：5046 / 5047

页数：2

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