Control of surface wettability of hydroxyapatite thin films by way of crystal imperfections

被引：2

作者：

Akazawa, Housei ^{[1
]}

Ueno, Yuko ^{[2
]}

机构：

[1] NTT Device Innovat Ctr, Atsugi, Kanagawa 2430198, Japan

[2] NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 10期

关键词：

OSTEOBLAST ADHESION; ION IRRADIATION; MINERALIZATION; DEPOSITION; BEHAVIOR; GROWTH; CHARGE;

D O I：

10.7567/APEX.8.107001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The wettability of hydroxyapatite (HAp) films can be controlled by process conditions and substrates. C-plane-terminated HAp films on Si(100) substrate were hydrophobic. Only when sputter deposition with Ar was carried out with H2O vapor, followed by solid-phase crystallization at 500-700 degrees C, did highly hydrophilic films with water contact angles between 10 and 20 degrees form. The hydrophilic property was characterized by H2O bending mode signals at 1595 cm(-1) in infrared spectroscopy. Preferentially c- or (310)-plane-oriented epitaxial HAp films on sapphire c-planes were hydrophobic, whereas randomly oriented polycrystalline HAp films on sapphire a-planes were moderately hydrophilic. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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