Fabrication of nanopatterns on H-passivated Si surface by AFM local anodic oxidation

被引：16
作者：
Mo, Yufei [1 ,2 ]
Wang, Ying [1 ,2 ]
Bai, Mingwu [1 ]
机构：
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 41卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Nanopattern; Local anodic oxidation; Atomic force microscopy; Pulse bias voltage;
D O I：
10.1016/j.physe.2008.06.015
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Nano-sized patterns resulted from localized electrochemical oxidation by using atomic force microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication of nanopattern by local anodic oxidation (LAO) on H-passivated Si surface is presented. A special attention is paid to finding relations between the size of oxide nanopatterns and operational parameters such as tip-sample pulsed bias voltage, pulsewidth and relative humidity to fabricate oxide nanopattern. The LAO process shows the highly potential of solution processes for fabricating nano/micro-devices constructed from semiconductor materials for visible-light-emitting devices. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：146 / 149
页数：4
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