The progress of flexible organic field-effect transistors

被引:6
|
作者
Dong Jing [1 ,2 ]
Chai Yu-Hua [1 ]
Zhao Yue-Zhi [2 ]
Shi Wei-Wei [2 ]
Guo Yu-Xiu [1 ,2 ]
Yi Ming-Dong [2 ]
Xie Ling-Hai [2 ]
Huang Wei [2 ]
机构
[1] Northeast Agr Univ, Sch Elect & Informat, Haerbin 150030, Peoples R China
[2] Nanjing Univ Posts & Telecommunacat, Inst Adv Mat, Nanjing 210046, Jiangsu, Peoples R China
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
flexible; transistors; organic/polymer; solution-process; THIN-FILM TRANSISTORS; ACTIVE-MATRIX DISPLAYS; HIGH-PERFORMANCE; ELECTRICAL RESPONSE; GATE DIELECTRICS; HIGH-RESOLUTION; LARGE-AREA; ELECTRONICS; CIRCUITS; SEMICONDUCTOR;
D O I
10.7498/aps.62.047301
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Flexible organic field-effect transistors (OFETs) have revealed wide prospect in their applications to the flexible display, flexible sensor, flexible radio frequency tag and flexible integrated circuit due to their advantages such as foldability, light weight of device and low-cost fabrication process. On the basis of the introduction of advancement in the study of flexible OFETs in this paper, a broad overview about device structures of flexible OFETs, substrate materials, gate insulating layer materials, active layer materials and electrode materials used for flexible OFETs is given, the fabricating process of flexible OFETs is explained, and the effect of bending pattern on the performance of flexible OFETs is discussed. Finally, the application areas of flexible OFETs are summarized and prospected.
引用
收藏
页数:14
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