Defect induced room temperature ferromagnetism in lead-free ferroelectric Bi0.5K0.5TiO3 materials

被引：27
作者：
Tuan, N. H. [1 ]
Thiet, D. V. [1 ]
Odkhuu, D. [2 ]
Bac, L. H. [1 ]
Binh, P. V. [1 ]
Dung, D. D. [1 ]
机构：
[1] Ha Noi Univ Sci & Technol, Sch Engn Phys, 1 Dai Co Viet Rd, Hanoi, Vietnam
[2] Incheon Natl Univ, Dept Phys, Incheon 22012, South Korea
来源：
PHYSICA B-CONDENSED MATTER | 2018年 / 532卷
关键词：
Bi0.5K0.5TiO3; Mn-doped Bi0.5K0.5TiO3; Sol-gel; Ferromagnetism; Lead-free ferroelectric; ELECTRICAL-PROPERTIES; AB-INITIO; PIEZOELECTRIC PROPERTIES; SOLID-SOLUTION; MN; CERAMICS;
D O I：
10.1016/j.physb.2017.04.025
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Development the multiferroic materials based on the lead-free ferroelectric materials is the new possible channel to create the next generation devices. The pure Bi0.5K0.5TiO3 and Mn-doped Bi0.5K0.5TiO3 materials were synthesized using sol-gel method. While the substitution of Mn for Ti site reduces the optical band gap in Bi0.5K0.5TiO3, the room temperature ferromagnetism is obtained in both un-doped and Mn-doped Bi0.5K0.5TiO3 materials. By means of the first-principles calculations, the ferromagnetism in Mn-doped Bi0.5K0.5TiO3 materials can be explained by the mixed valence states of Mn ions through the crystal field mechanism and that in un-doped Bi0.5K0.5TiO3 materials is ascribed to the formation of O or Ti vacancies during the sample growth.
引用
收藏
页码：108 / 114
页数：7
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