NbO2-Based Frequency Storable Coupled Oscillators for Associative Memory Application

被引：17

作者：

Lee, Donguk ^{[1
]}

Cha, Euijun ^{[1
]}

Park, Jaehyuk ^{[1
]}

Sung, Changhyuck ^{[1
]}

Moon, Kibong ^{[1
]}

Chekol, Solomon Amsalu ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Insulator-metal-transition; neuromorphic system; oscillatory neuron; coupled oscillators;

D O I：

10.1109/JEDS.2018.2793342

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oscillatory neural networks with nano-oscillators and synapse devices are a promising alternative to implement neuromorphic systems owing to its fast recognition speed and low power consumption. In this paper, we demonstrate a compact frequency storable oscillator using nanoscale two-terminal NbO2 insulator-metal-transition devices along with TaOx-based resistive switching memory (RRAM) devices. By controlling RRAM resistance, we realized a wide range of analog oscillation frequencies. The synchronization window of two coupled oscillators, which is a key parameter for determining pattern recognition, increases with the increasing coupling capacitance and decreasing RRAM resistance of the reference oscillator. The simple device structure (metal-NbO2-metal-TaOx-metal), small device area (4F(2)), and frequency storability of NbO2-based coupled oscillator device show a strong potential for future integrated neuromorphic device application.

引用

页码：250 / 253

页数：4

共 17 条

[1]

[Anonymous], P 13 INT WORKSH CELL

[2]

[Anonymous], 2017, Nanotechnology

[3] Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application [J].

Cha, Euijun ;

Park, Jaehyuk ;

Woo, Jiyong ;

Lee, Daeseok ;

Prakash, Amit ;

Hwang, Hyunsang .

APPLIED PHYSICS LETTERS, 2016, 108 (15)

[4]

Chen P, 2016, I C MECH MACH VIS PR, P1

[5]

Gao LG, 2017, 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM), P152, DOI 10.1109/EDTM.2017.7947555

[6]

Gray C M, 1994, J Comput Neurosci, V1, P11, DOI 10.1007/BF00962716

[7] Oscillatory Neural Networks Based on TMO Nano-Oscillators and Multi-Level RRAM Cells [J].

Jackson, Thomas C. ;

Sharma, Abhishek A. ;

Bain, James A. ;

Weldon, Jeffrey A. ;

Pileggi, Lawrence .

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2015, 5 (02) :230-241

[8]

Levitan S.P., 2012, Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on, P1, DOI DOI 10.1109/CNNA.2012.6331473

[9] Modeling and Simulation of Vanadium Dioxide Relaxation Oscillators [J].