High-temperature photoemission spectroscopy of the Ge(110) surface and high-temperature surface order-disorder phase transitions

被引：4
|
作者：
Santoni, A
Laine, AD
Petaccia, L
Dhanak, VR
Sancrotti, M
Modesti, S
机构：
[1] ENEA, INN, MATAV, CR Casaccia, I-00100 Rome, Italy
[2] INFM, Lab TASC, I-34012 Trieste, Italy
[3] Univ Liverpool, Ctr Surface Sci, Liverpool L69 3BX, Merseyside, England
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1999年 / 101卷
关键词：
Ge(110); phase transitions; photoemission spectroscopy; surface melting;
D O I：
10.1016/S0368-2048(98)00503-9
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The Ge(110) surface has been investigated by core-level and valence band (VB) photoemission spectroscopy as a function of temperature starting from the room temperature c(8X10) reconstructed surface up to 1196 K. Evidence of a phase transition is found at about 750+/-50 K from core-level and valence band data analysis. VB photoemission shows that above 750 K the Ge(110) surface acquires increasing metallic character up to 1110 K, where a sudden, intense jump of the emission intensity at the Fermi level is observed. At higher temperatures up to 1196 K, a finite and constant density of states is observed, indicating the presence of a metallic surface layer. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：423 / 427
页数：5
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