High-temperature photoemission spectroscopy of the Ge(110) surface and high-temperature surface order-disorder phase transitions

被引：4
|
作者：
Santoni, A
Laine, AD
Petaccia, L
Dhanak, VR
Sancrotti, M
Modesti, S
机构：
[1] ENEA, INN, MATAV, CR Casaccia, I-00100 Rome, Italy
[2] INFM, Lab TASC, I-34012 Trieste, Italy
[3] Univ Liverpool, Ctr Surface Sci, Liverpool L69 3BX, Merseyside, England
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1999年 / 101卷
关键词：
Ge(110); phase transitions; photoemission spectroscopy; surface melting;
D O I：
10.1016/S0368-2048(98)00503-9
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The Ge(110) surface has been investigated by core-level and valence band (VB) photoemission spectroscopy as a function of temperature starting from the room temperature c(8X10) reconstructed surface up to 1196 K. Evidence of a phase transition is found at about 750+/-50 K from core-level and valence band data analysis. VB photoemission shows that above 750 K the Ge(110) surface acquires increasing metallic character up to 1110 K, where a sudden, intense jump of the emission intensity at the Fermi level is observed. At higher temperatures up to 1196 K, a finite and constant density of states is observed, indicating the presence of a metallic surface layer. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：423 / 427
页数：5
相关论文
共 50 条
  • [1] High-temperature phase transitions at the Ge(110) surface
    Santoni, A
    Petaccia, L
    Dhanak, VR
    Modesti, S
    SURFACE SCIENCE, 2000, 444 (1-3) : 156 - 162
  • [2] High-temperature phase transitions on the Si(100) surface monitored by photoemission spectroscopy
    Santoni, A
    Dhanak, VR
    Grill, L
    Petaccia, L
    SURFACE SCIENCE, 2001, 474 (1-3) : L217 - L221
  • [3] Photoemission and photoabsorption study of the high-temperature phases of the Ge(111) surface
    Goldoni, A
    Santoni, A
    Sancrotti, M
    Dhanak, VR
    Modesti, S
    SURFACE SCIENCE, 1997, 382 (1-3) : 336 - 348
  • [4] An Order-Disorder Type High-Temperature Multiaxial Supramolecular Ferroelectric
    He, Lei
    Xu, Ke
    Shi, Ping-Ping
    Ye, Qiong
    Zhang, Wen
    ADVANCED ELECTRONIC MATERIALS, 2022, 8 (06)
  • [5] Electronic structure of the high-temperature Ge(100) surface studied by valence band photoemission
    Santoni, A
    Dhanak, VR
    SURFACE SCIENCE, 2003, 537 (1-3) : L423 - L428
  • [6] Photoemission of Ge(110) at room and high temperature
    Laine, AD
    Cepek, C
    Goldoni, A
    Vandre, S
    DeSeta, M
    Franco, M
    Avila, J
    Asensio, MC
    Sancrotti, M
    SURFACE SCIENCE, 1998, 402 (1-3) : 875 - 879
  • [7] High-temperature phase transitions and elasticity of silica polymorphs
    Lakshtanov, Dmitry L.
    Sinogeikin, Stanislav V.
    Bass, Jay D.
    PHYSICS AND CHEMISTRY OF MINERALS, 2007, 34 (01) : 11 - 22
  • [8] High-temperature phase transitions and elasticity of silica polymorphs
    Dmitry L. Lakshtanov
    Stanislav V. Sinogeikin
    Jay D. Bass
    Physics and Chemistry of Minerals, 2007, 34 : 11 - 22
  • [9] Metallization of the Ge(111) surface at high-temperature probed by energy-loss and Auger spectroscopies
    Di Cicco, A
    Giovenali, B
    Gunnella, R
    Principi, E
    Simonucci, S
    SOLID STATE COMMUNICATIONS, 2005, 134 (09) : 577 - 582
  • [10] Phase Transitions and Structural Evolution of Manganese Ores During High-Temperature Treatment
    Safarov, Ruslan Z.
    Baikenov, Yerlan A.
    Zhandildenova, Assemgul K.
    Kopishev, Eldar E.
    Kamatov, Ruslan M.
    Kargin, Jumat B.
    Cornejo, H. Sanchez
    Barnes, Crispin H. W.
    Valladares, Luis De Los Santos
    METALS, 2025, 15 (01)
12345