Study of local trapping and STI edge effects on charge-trapping NAND Flash

被引：26

作者：

Lue, Hang-Ting ^{[1
]}

Hsu, Tzu-Hsuan ^{[1
]}

Wang, Szu-Yu ^{[2
]}

Hsiao, Yi-Hsuan ^{[1
]}

Lai, Erh-Kun ^{[1
]}

Yang, Ling-Wu ^{[2
]}

Yang, Tahone ^{[2
]}

Chen, Kuang-Chao ^{[2
]}

Hsieh, Kuang-Yeu ^{[1
]}

Liu, Rich ^{[1
]}

Lu, Chih-Yuan ^{[1
]}

机构：

[1] Macronix Int Co Ltd, Emerging Cent Lab, 16 Li Hsin Rd,Hsinchu Sci Pk, Hsinchu, Taiwan

[2] Macronix Int Co Ltd, Technol Dev Ctr, Hsinchu, Taiwan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418891

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Unlike the floating gate Flash device, charge-trapping (CT) devices store charges locally and are thus profoundly affected by non-uniform injection effect. The characteristics of a CT device are dominated by the local minimum-Vt region along the channel width. We have analyzed various STI structures including raised-STI, recessed-STI, and near-planar structures, and found that the program/erase characteristics are strongly impacted by the STI corner geometry due to local field enhancement (FE) and non-uniform injection effects. Moreover, both g(m) and S.S. vary during program/erase and thus increase programming/erasing complexity. The read disturb, program disturb, and retention characteristics are examined in detail. These conclusions apply to all CT devices.

引用

页码：161 / +

页数：3

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