Scanning tunneling measurements of layers of superconducting 2H-TaSe2: Evidence for a zero-bias anomaly in single layers

被引：34

作者：

Galvis, J. A. ^{[1
]}

Rodiere, P. ^{[2
]}

Guillamon, I. ^{[1
,3
]}

Osorio, M. R. ^{[1
]}

Rodrigo, J. G. ^{[1
]}

Cario, L. ^{[4
]}

Navarro-Moratalla, E. ^{[5
]}

Coronado, E. ^{[5
]}

Vieira, S. ^{[1
]}

Suderow, H. ^{[1
]}

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, Fac Ciencies, Inst Ciencia Mat Nicolas Cabrera,Lab Bajas Temp, E-28049 Madrid, Spain

[2] CRS UJF, Inst Neel, F-38042 Grenoble 9, France

[3] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[4] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 03, France

[5] Univ Valencia, Inst Ciencia Mol ICMol, Paterna 46980, Spain

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 09期

关键词：

CHARGE-DENSITY WAVES; FERMI-SURFACE; STATES; GRAPHENE; CORE; BAND; STM;

D O I：

10.1103/PhysRevB.87.094502

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a characterization of surfaces of the dichalcogenide TaSe2 using scanning tunneling microscopy and spectroscopy at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero-bias peak on top of Se atoms to a gap in between Se atoms. The zero-bias peak is additionally modulated by the commensurate 3a(0) x 3a(0) charge-density wave of 2H-TaSe2. Multilayers of 2H-TaSe2 show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers. DOI: 10.1103/PhysRevB.87.094502

引用

页数：9

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