Heterogeneous integration of enhancement mode In0.7Ga0.3As quantum well transistor on silicon substrate using thin (≤ 2 gm) composite buffer architecture for high-speed and low-voltage (0.5V) logic applications

被引：104

作者：

Hudait, M. K. ^{[1
]}

Dewey, G. ^{[1
]}

Datta, S. ^{[1
]}

Fastenau, J. M. ^{[2
]}

Kavalieros, J. ^{[1
]}

Liu, W. K. ^{[2
]}

Lubyshev, D. ^{[2
]}

Pillarisetty, R. ^{[1
]}

Rachmady, W. ^{[1
]}

Radosavljevic, M. ^{[1
]}

Rakshit, T. ^{[1
]}

Chau, Robert ^{[1
]}

机构：

[1] Intel Corp, Technol & Mfg Grp, Hillsboro, OR 97124 USA

[2] IQE Inc, Bethlehem, PA USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes for the first time, the heterogeneous integration of In0.7Ga0.3As quantum well device structure on Si substrate through a novel, thin composite metamorphic buffer architecture with the total composite buffer thickness successfully scaled down to 1.3 mu m, resulting in high-performance short-channel enhancement-mode In0.7Ga0.3As QWFETs on Si substrate for future high-speed digital logic applications at low supply voltage such as 0.5V.

引用

页码：625 / +

页数：3

共 4 条

[1] Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate [J].

Datta, Suman ;

Dewey, G. ;

Fastenau, J. M. ;

Hudait, M. K. ;

Loubychev, D. ;

Liu, W. K. ;

Radosavljevic, M. ;

Rachmady, W. ;

Chau, R. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :685-687

[2]

KIM DH, 2006, IEDM, P837

[3] Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications [J].

Lubyshev, D ;

Fastenau, JM ;

Fang, XM ;

Wu, Y ;

Doss, C ;

Snyder, A ;

Liu, WK ;

Lamb, MSM ;

Bals, S ;

Song, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03) :1565-1569

[4] Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz [J].

Yamashita, Y ;

Endoh, A ;

Shinohara, K ;

Hikosaka, K ;

Matsui, T ;

Hiyamizu, S ;

Mimura, T .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) :573-575

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