Studies of Radiation-Induced Defects in Li2SiO3:Sm Phosphor Material

被引:4
|
作者
Singh, N. [1 ]
Singh, Vijay [1 ]
Watanabe, S. [2 ]
Rao, T. K. Gundu [2 ]
Chubaci, J. F. D. [2 ]
Cano, N. F. [3 ]
Pathak, M. S. [1 ]
Singh, Pramod K. [4 ]
Dhoble, S. J. [5 ]
机构
[1] Konkuk Univ, Dept Chem Engn, Seoul 143701, South Korea
[2] Univ Sao Paulo, Inst Phys, BR-05508090 Sao Paulo, SP, Brazil
[3] Univ Fed Sao Paulo, Dept Ciencias Mar, BR-11070100 Santos, SP, Brazil
[4] Sharda Univ, Mat Res Lab, Greater Noida 201310, India
[5] RTM Nagpur Univ, Dept Phys, Nagpur 440033, Maharashtra, India
关键词
Thermoluminescence; combustion; phosphor; defect centers; electron spin resonance; ELECTRON-SPIN-RESONANCE; F-CENTERS; MAGNESIUM-OXIDE; TI3+ CENTERS; PHOTOLUMINESCENCE; THERMOLUMINESCENCE; LUMINESCENCE; CRYSTALS; QUARTZ; GLASS;
D O I
10.1007/s11664-016-4899-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Li2SiO3:Sm was synthesized by the solution combustion method. Powder x-ray diffraction technique was used to find the phase formation. Li2SiO3:Sm exhibits thermoluminescence (TL) peaks at approximately 140 degrees C, 155 degrees C, 190 degrees C, 250 degrees C, and 405 degrees C. Three defect centers contribute to the observed electron spin resonance spectrum from the gamma irradiated phosphor. Center I with principal g-values g(parallel to) = 2.0206 and g(perpendicular to) = 2.0028 is identified as an O-2(-) ion while center II, with an isotropic g-factor 2.0039, is assigned to an F+-type center. Center III is assigned to a Ti3+ center. The Ti3+ center is related to the 250 degrees C TL peak while the O-2(-) ion also correlates with the main TL peak at 250 degrees C. An additional defect center is observed during thermal annealing experiments, and the center (assigned to F+ center) seems to originate from an F center. The F center appears to be associated with the high temperature TL peak in a Li2SiO3: Sm phosphor. The luminescence spectrum reveals the dominant emission peaks at 605 ((4)G(5/2) -> H-6(7/2)) nm under the excitation wavelength of 402 nm.
引用
收藏
页码:451 / 457
页数:7
相关论文
共 50 条
  • [21] ON THE PHYSICAL MODELS OF ANNEALING OF RADIATION-INDUCED DEFECTS IN AMORPHOUS SIO2
    DEVINE, RAB
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4): : 261 - 264
  • [22] RADIATION-INDUCED DEFECTS IN DENSE PHASES OF CRYSTALLINE AND AMORPHOUS SIO2
    DEVINE, RAB
    HUBNER, K
    PHYSICAL REVIEW B, 1989, 40 (10): : 7281 - 7283
  • [23] DIE KRISTALLSTRUKTUR DES LITHIUMMETASILIKATES, (LI2SIO3)X
    SEEMANN, H
    ACTA CRYSTALLOGRAPHICA, 1956, 9 (03): : 251 - 252
  • [24] PHOTOCONDUCTIVITY STUDIES OF RADIATION-INDUCED DEFECTS IN SILICON
    YOUNG, RC
    CORELLI, JC
    PHYSICAL REVIEW B, 1972, 5 (04): : 1455 - &
  • [25] Radiation-induced defects in manganese-doped lithium tetraborate phosphor
    Annalakshmi, O.
    Jose, M. T.
    Madhusoodanan, U.
    Sridevi, J.
    Venkatraman, B.
    Amarendra, G.
    Mandal, A. B.
    RADIATION PROTECTION DOSIMETRY, 2015, 163 (01) : 14 - 21
  • [26] Excitonic effects in the optical spectra of Li2SiO3 compound
    Han, Nguyen Thi
    Dien, Vo Khuong
    Lin, Ming-Fa
    SCIENTIFIC REPORTS, 2021, 11 (01)
  • [27] Excitonic effects in the optical spectra of Li2SiO3 compound
    Nguyen Thi Han
    Vo Khuong Dien
    Ming-Fa Lin
    Scientific Reports, 11
  • [28] Fabrication and ionic conductivity of Li2SiO3 thin film
    Furusawa, Shin-ichi
    Kasahara, Tatsuya
    Kamiyama, Atsushi
    SOLID STATE IONICS, 2009, 180 (6-8) : 649 - 653
  • [29] GROWTH OF LI2SIO3 AND LIGEO3 MONO-CRYSTALS
    BACH, H
    LIEBERTZ, J
    STAHR, S
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1977, 146 (1-3): : 143 - 143
  • [30] Ionic Conductivity of Li2SiO3 Thin Film on Sapphire Substrate
    Furusawa, Shin-ichi
    Shimizu, Kouhei
    Tsurui, Takao
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2010, 79