Simulations of Graphene Base Transistors With Improved Graphene Interface Model

被引：6

作者：

Di Lecce, Valerio ^{[1
]}

Gnudi, Antonio ^{[1
]}

Gnani, Elena ^{[1
]}

Reggiani, Susanna ^{[1
]}

Baccarani, Giorgio ^{[1
]}

机构：

[1] Univ Bologna, E De Castro Adv Res Ctr Elect Syst, I-40136 Bologna, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 09期

关键词：

Graphene; modeling; quantum transport; simulation; transistor; HOT-ELECTRON TRANSISTOR; TERAHERTZ OPERATION;

D O I：

10.1109/LED.2015.2452214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simulation study of the graphene base heterojunction transistor (GBHT) is presented based on a novel realistic graphene-Si interface model, calibrated on the experimental graphene-Si Schottky diodes, whose current-voltage-temperature characteristics are well reproduced. The GBHT simulations predict f(T) in the tens-of-gigahertz range and confirm the need for an improved quality of the graphene interface for the terahertz operation to be reached.

引用

页码：969 / 971

页数：3

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