A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

被引：15

作者：

Kwan, Alex Man Ho ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 01期

关键词：

High-voltage gate drive; monolithic integration of enhancement-/depletion-mode (E/D-mode) AlGaN/GaN high-electron mobility transistor (HEMT); reliability; VOLTAGE;

D O I：

10.1109/LED.2012.2224632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high-electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (> 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection scheme with a wide input gate bias range also facilitates simple and reliable connections between the gate driver circuits and the power switches without the level shifter circuits for conventional GaN Schottky gate power HEMTs.

引用

页码：30 / 32

页数：3

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