Terahertz bolometric detection by thermal noise in graphene field effect transistor

被引：4

作者：

Mahjoub, Akram M. ^{[1
]}

Suzuki, Shinichi ^{[1
]}

Ouchi, Takahiro ^{[1
]}

Aoki, Nobuyuki ^{[1
]}

Miyamoto, Katsuhiko ^{[1
]}

Yamaguchi, Tomohiro ^{[2
]}

Omatsu, Takashige ^{[1
,3
]}

Ishibashi, Koji ^{[2
]}

Ochiai, Yuichi ^{[1
]}

机构：

[1] Chiba Univ, Grad Sch Adv Integrat Sci, Chiba 2638522, Japan

[2] RIKEN, Adv Device Lab, Wako, Saitama 3510198, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 08期

基金：

日本学术振兴会;

关键词：

1/F NOISE; DEVICES; PHOTODETECTORS;

D O I：

10.1063/1.4929768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolayer (MLG) and bilayer (BLG) graphene devices have been fabricated with integrated antennas and have been investigated for a wideband terahertz (THz) detection at room temperature (RT). The devices show opposite (metallic vs. semiconducting, respectively) temperature coefficients of their resistance, which enable us to achieve a reproducible THz response via bolometric heating. The bolometric nature of this response is inferred by determining the spectral density of the 1/f resistance noise exhibited by the devices, as a function of the incident THz power. With increasing power, the spectral density varies in the two devices in a manner that reflects the opposite signs of their resistance temperature coefficients. The bolometric response is furthermore confirmed for both devices by the variation of their Hooge parameter as a function of the THz power. Overall, these observations confirm the capacity of graphene devices for sensitive broadband THz detection near RT. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 37 条

[1] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[2]

Balandin AA, 2013, NAT NANOTECHNOL, V8, P549, DOI [10.1038/NNANO.2013.144, 10.1038/nnano.2013.144]

[3] Making graphene visible [J].

Blake, P. ;

Hill, E. W. ;

Castro Neto, A. H. ;

Novoselov, K. S. ;

Jiang, D. ;

Yang, R. ;

Booth, T. J. ;

Geim, A. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

[4]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/NPHOTON.2010.186, 10.1038/nphoton.2010.186]

[5]

Cai X, 2014, NAT NANOTECHNOL, V9, P814, DOI [10.1038/nnano.2014.182, 10.1038/NNANO.2014.182]

[6] Heat Flux and Entropy Produced by Thermal Fluctuations [J].

Ciliberto, S. ;

Imparato, A. ;

Naert, A. ;

Tanase, M. .

PHYSICAL REVIEW LETTERS, 2013, 110 (18)

[7] Development of high frequency and wide bandwidth Johnson noise thermometry [J].

Crossno, Jesse ;

Liu, Xiaomeng ;

Ohki, Thomas A. ;

Kim, Philip ;

Fong, Kin Chung .

APPLIED PHYSICS LETTERS, 2015, 106 (02)

[8] Mobility and saturation velocity in graphene on SiO2 [J].

Dorgan, Vincent E. ;

Bae, Myung-Ho ;

Pop, Eric .

APPLIED PHYSICS LETTERS, 2010, 97 (08)

[9] Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices [J].

Farmer, Damon B. ;

Golizadeh-Mojarad, Roksana ;

Perebeinos, Vasili ;

Lin, Yu-Ming ;

Tulevski, George S. ;

Tsang, James C. ;

Avouris, Phaedon .

NANO LETTERS, 2009, 9 (01) :388-392

[10]

Freitag M, 2013, NAT PHOTONICS, V7, P53, DOI [10.1038/nphoton.2012.314, 10.1038/NPHOTON.2012.314]

← 1 2 3 4 →