Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

被引：36

作者：

Kirkpatrick, Casey J. ^{[1
]}

Lee, Bongmook ^{[1
]}

Suri, Rahul ^{[1
]}

Yang, Xiangyu ^{[1
]}

Misra, Veena ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 09期

基金：

美国国家科学基金会;

关键词：

Atomic layer deposition (ALD); GaN; heterostructure field-effect transistor (HFET); metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET); SiO2; FIELD-EFFECT TRANSISTORS; N-TYPE; SURFACE; OXIDE; GAN; PASSIVATION; FILMS;

D O I：

10.1109/LED.2012.2203782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter investigates the electrical properties of SiO2 gate dielectric on GaN heterostructures deposited by atomic layer deposition (ALD). ALD SiO2 has a dielectric constant of 3.9 and a bandgap of 8.8 eV. ALD SiO2 provides a good interface to GaN and minimizes the interfacial layer growth. The threshold voltage of metal-oxide-semiconductor heterojunction field-effect transistors with ALD SiO2 dielectric is -1.5 V, owing to a fixed charge concentration of -1.6 x 10(12) cm(-2). It was also found that devices with ALD SiO2 dielectric exhibit three orders of magnitude reduction in gate leakage current compared to conventional Schottky gate HFETs.

引用

页码：1240 / 1242

页数：3

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