Photoemission studies of passivation of germanium nanowires

被引:59
作者
Adhikari, H
McIntyre, PC
Sun, SY
Pianetta, P
Chidsey, CED [1 ]
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lab, Menlo Pk, CA 94025 USA
[3] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.2158027
中图分类号
O59 [应用物理学];
学科分类号
摘要
The surface of single crystal germanium nanowires grown by cold-wall chemical vapor deposition was studied by synchrotron radiation photoemission spectroscopy and also by conventional x-ray photoelectron spectroscopy. The surfaces of the nanowires are not oxidized from which we infer that they are hydrogen passivated as-grown. Exposure to laboratory atmosphere leads to germanium oxide growth with oxidation states of Ge1+, Ge2+, Ge3+, while exposure to UV light leads to a predominance of the Ge4+ oxidation state. Most of the surface oxide could be removed readily by aqueous HF treatment which presumably leaves the nanowire surface hydrogen terminated. The HF-treated surface has more limited stability in air. Alternatively, chlorine termination could be achieved by aqueous HCl treatment of the oxide-coated nanowires. This chlorine termination was found to be more stable in air than the putative hydrogen termination achieved by aqueous HF treatment. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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