Coherent phonon dynamics in short-period InAs/GaSb superlattices

被引：3
作者：
Noe, G. T. [1 ,2 ,3 ]
Haugan, H. J. [4 ]
Brown, G. J. [4 ]
Sanders, G. D. [5 ]
Stanton, C. J. [5 ]
Kono, J. [1 ,2 ,3 ]
机构：
[1] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA
[2] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
[3] Rice Univ, Richard E Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
[4] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[5] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2012年 / 52卷 / 06期
基金：
美国国家科学基金会;
关键词：
InAs/GaSb type-II superlattices; Coherent phonons; Infrared detectors; ACOUSTIC PHONONS; OSCILLATION;
D O I：
10.1016/j.spmi.2012.08.010
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have performed ultrafast pump-probe spectroscopy studies on a series of InAs/GaSb-based short-period superlattice (SL) samples with periods ranging from 46 angstrom to 71 angstrom. We observe two types of oscillations in the differential reflectivity with fast (similar to 1-2 ps) and slow (similar to 24 ps) periods. The period of the fast oscillations changes with the SL period and can be explained as coherent acoustic phonons generated from carriers photoexcited within the SL. This mode provides an alternative method for determining the SL period. The period of the slow mode depends on the wavelength of the probe pulse and can be understood as a propagating coherent phonon wavepacket modulating the reflectivity of the probe pulse as it travels from the surface into the sample. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1071 / 1077
页数：7
相关论文
共 49 条
  • [1] Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors
    Haugan, HJ
    Szmulowicz, F
    Brown, GJ
    Ullrich, B
    Munshi, SR
    Grazulis, L
    Mahalingam, K
    Fenstermaker, ST
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2) : 289 - 292
  • [2] Impact of interfacial thickness on Raman intensity profiles and phonon anisotropy in short-period (AlSb)n/(GaSb)m superlattices
    Talwar, Devki N.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2022, 40 (04):
  • [3] Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains
    Altukhov, I. V.
    Dizhur, S. E.
    Kagan, M. S.
    Khvalkovskiy, N. A.
    Paprotskiy, S. K.
    Vasil'evskii, I. S.
    Vinichenko, A. N.
    SEMICONDUCTORS, 2018, 52 (04) : 473 - 477
  • [4] Raman and photoluminescence investigation of InAs/GaSb and InAs/InAsSb superlattices
    Murawski, K.
    Grodecki, K.
    Henig, A.
    Michalczewski, K.
    Kubiszyn, L.
    Benyahia, D.
    Jankiewicz, B.
    Budner, B.
    Wysmolek, A.
    Martyniuk, P.
    12TH CONFERENCE ON INTEGRATED OPTICS: SENSORS, SENSING STRUCTURES, AND METHODS, 2017, 10455
  • [5] MOCVD growth of InAs/GaSb type-II superlattices on InAs substrates for short wavelength infrared detection
    Chen, Ying
    Liu, Jiafeng
    Zhao, Yu
    Teng, Yan
    Hao, Xiujun
    Li, Xin
    Zhu, He
    Zhu, Hong
    Wu, Qihua
    Huang, Yong
    INFRARED PHYSICS & TECHNOLOGY, 2020, 105 (105)
  • [6] Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices
    Altukhov, I. V.
    Dizhur, S. E.
    Kagan, M. S.
    Paprotskiy, S. K.
    Khval'kovskii, N. A.
    Buravlev, A. D.
    Vasil'ev, A. P.
    Zadiranov, Yu. M.
    Il'inskaya, N. D.
    Usikova, A. A.
    Ustinov, V. M.
    JETP LETTERS, 2016, 103 (02) : 122 - 124
  • [7] Design Effects on the Material Properties of InAs/GaSb Superlattices
    Haugan, H. J.
    Brown, G. J.
    Szmulowicz, F.
    Elhamri, S.
    15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15), 2011, 1416 : 155 - 157
  • [8] Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates
    Benyahia, D.
    Kubiszyn, L.
    Michalczewski, K.
    Keblowski, A.
    Martyniuk, P.
    Piotrowski, J.
    Rogalski, A.
    ACTA PHYSICA POLONICA A, 2017, 132 (02) : 322 - 324
  • [9] Temperature dependent absorption derivative on InAs/GaSb type II superlattices
    Klein, Brianna
    Gautam, Nutan
    Myers, Stephen
    Krishna, Sanjay
    INFRARED TECHNOLOGY AND APPLICATIONS XXXVIII, PTS 1 AND 2, 2012, 8353
  • [10] Strong terahertz absorption in long-period InAs/GaSb type-II superlattices with inverted band structures
    Li, L. L.
    Ni, J.
    Xu, W.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 80 : 1 - 10
12345