Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect

We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreevlike reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, dI/dV was proportional to V1/v with bias voltage V and v = 1/2. By contrast, in the strong tunneling limit, dI/dV was expressed by (e2/h)2v/(1 + v) with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with v = 5/2 and an integer quantum Hall state with v = 3.