Reliability of Au-Ge and Au-Si Eutectic Solder Alloys for High-Temperature Electronics

被引:49
|
作者
Chidambaram, Vivek [1 ]
Yeung, Ho Beng [1 ]
Shan, Gao [1 ]
机构
[1] ASTAR, Inst Microelect, Singapore 117685, Singapore
关键词
High-temperature solder; underbump metallization; nanoindentation; interfacial reaction; delamination; ball shear;
D O I
10.1007/s11664-012-2114-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-temperature electronics will facilitate deeper drilling, accessing harder-to-reach fossil fuels in oil and gas industry. A key requirement is reliability under harsh conditions for a minimum continuous operating time of 500 h at 300A degrees C. Eutectic solder alloys are generally favored due to their excellent fatigue resistance. Performance of Au-Ge and Au-Si eutectic solder alloys at 300A degrees C up to 500 h has been evaluated. Nanoindentation results confirm the loss of strength of Au-Ge and Au-Si eutectic solder alloys during thermal aging at 300A degrees C, as a result of grain coarsening. However, the pace at which the Au-Ge eutectic alloy loses its strength is much slower when compared with Au-Si eutectic alloy. The interfacial reactions between these eutectic solder alloys and the underbump metallization (UBM), i.e., electroless nickel immersion gold (ENIG) UBM and Cu/Au UBM, have been extensively studied. Spalling of Au3Cu intermetallic compound is observed at the interface between Au-Ge eutectic solder and the Cu/Au UBM, when aged at 300A degrees C for 500 h, while the consumption of ENIG UBM is nominal. Unlike the Au-Si solder joint, hot ball shear testing at high temperature confirmed that the Au-Ge joint on ENIG UBM, when aged at 300A degrees C for 500 h, could still comply with the minimum qualifying bump shear strength based on the UBM dimension used in this work. Thus, it has been determined that, among these two binary eutectic alloys, Au-Ge eutectic alloy could fulfill the minimum requirement specified by the oil and gas exploration industry.
引用
收藏
页码:2107 / 2117
页数:11
相关论文
共 23 条
  • [1] Reliability of Au-Ge and Au-Si Eutectic Solder Alloys for High-Temperature Electronics
    Vivek Chidambaram
    Ho Beng Yeung
    Gao Shan
    Journal of Electronic Materials, 2012, 41 : 2107 - 2117
  • [2] Joining of Cu, Ni, and Ti Using Au-Ge-Based High-Temperature Solder Alloys
    Nico Weyrich
    Shan Jin
    Liliana I. Duarte
    Christian Leinenbach
    Journal of Materials Engineering and Performance, 2014, 23 : 1585 - 1592
  • [3] Joining of Cu, Ni, and Ti Using Au-Ge-Based High-Temperature Solder Alloys
    Weyrich, Nico
    Jin, Shan
    Duarte, Liliana I.
    Leinenbach, Christian
    JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, 2014, 23 (05) : 1585 - 1592
  • [4] Solid-State Interfacial Reaction between Eutectic Au-Ge Solder and Cu/Ni(P)/Au Metalized Ceramic Substrate and Its Suppression
    F.Q.Lang
    H.Yamaguchi
    H.Nakagawa
    H.Sato
    JournalofMaterialsScience&Technology, 2015, 31 (05) : 445 - 452
  • [5] Solid-State Interfacial Reaction between Eutectic Au-Ge Solder and Cu/Ni(P)/Au Metalized Ceramic Substrate and Its Suppression
    Lang, F. Q.
    Yamaguchi, H.
    Nakagawa, H.
    Sato, H.
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2015, 31 (05) : 445 - 452
  • [6] Interfacial Reaction and Microstructural Evolution between Au-Ge Solder and Electroless Ni-W-P Metallization in High Temperature Electronics Interconnects
    Liu, Li
    Wang, Jing
    Liu, Changqing
    Cui, Jinzi
    Zhou, Zhaoxia
    Johnson, R. Wayne
    2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017), 2017, : 417 - 422
  • [7] Wetting and Soldering Behavior of Eutectic Au-Ge Alloy on Cu and Ni Substrates
    Leinenbach, C.
    Valenza, F.
    Giuranno, D.
    Elsener, H. R.
    Jin, S.
    Novakovic, R.
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (07) : 1533 - 1541
  • [8] Wetting and Soldering Behavior of Eutectic Au-Ge Alloy on Cu and Ni Substrates
    C. Leinenbach
    F. Valenza
    D. Giuranno
    H. R. Elsener
    S. Jin
    R. Novakovic
    Journal of Electronic Materials, 2011, 40 : 1533 - 1541
  • [9] Improvement in Joint Reliability of SiC Power Devices by a Diffusion Barrier Between Au-Ge Solder and Cu/Ni(P)-Metalized Ceramic Substrates
    Lang, Fengqun
    Yamaguchi, Hiroshi
    Ohashi, Hiromichi
    Sato, Hiroshi
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (07) : 1563 - 1571
  • [10] Improvement in Joint Reliability of SiC Power Devices by a Diffusion Barrier Between Au-Ge Solder and Cu/Ni(P)-Metalized Ceramic Substrates
    Fengqun Lang
    Hiroshi Yamaguchi
    Hiromichi Ohashi
    Hiroshi Sato
    Journal of Electronic Materials, 2011, 40 : 1563 - 1571