Improved current filament control during Zener diode zapping

被引：0
作者：
Roig, J. [1 ]
Lebon, J. [1 ]
Vandeweghe, S. [1 ]
Mouhoubi, S. [1 ]
Bauwens, F. [1 ]
机构：
[1] ON Semicond, Power Technol Ctr, B-9700 Oudenaarde, Belgium
来源：
MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 9-10期
关键词：
FUSE;
D O I：
10.1016/j.microrel.2012.06.144
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The filament-based failure is investigated in this work by experiment and 3D TCAD simulations in Zener diodes used as one-time-programmable (OTP) memories. Different zapping mechanisms with their inherent electrical and physical signatures are identified and elucidated. Moreover, a new trenched Zener structure is fabricated and tested in order to provide static current filaments as well as to minimize the power to generate them. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2368 / 2373
页数：6
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