An energy relaxation time model for device simulation

被引：47

作者：

Gonzalez, B

Palankovski, V

Kosina, H

Hernandez, A

Selberherr, S

机构：

[1] Univ Inst Appl Microelect, E-35017 Las Palmas Gran Canaria, Spain

[2] Vienna Tech Univ, Inst Microelect, A-1040 Vienna, Austria

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 09期

关键词：

energy relaxation time; simulation; models; compounds; devices;

D O I：

10.1016/S0038-1101(99)00132-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition, (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1791 / 1795

页数：5

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