Broadband mid-infrared frequency comb generation in a Si3N4 microresonator

被引：520

作者：

Luke, Kevin ^{[1
]}

Okawachi, Yoshitomo ^{[2
]}

Lamont, Michael R. E. ^{[1
,2
,3
]}

Gaeta, Alexander L. ^{[2
,3
]}

Lipson, Michal ^{[1
,3
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[3] Cornell Univ, Kavli Inst Cornell, Ithaca, NY 14853 USA

来源：

OPTICS LETTERS | 2015年 / 40卷 / 21期

基金：

美国国家科学基金会;

关键词：

MU-M; CRYSTALLINE MICRORESONATORS; FEMTOSECOND LASER; SILICON-NITRIDE; RESONATORS;

D O I：

10.1364/OL.40.004823

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate broadband frequency comb generation in the mid-infrared (MIR) from 2.3 to 3.5 mu m in a Si3N4 microresonator. We engineer the dispersion of the structure in the MIR using a Sellmeier equation we derive from experimental measurements performed on Si3N4 films from the UV to the IR. We use deposition-anneal cycling to decrease absorption losses due to vibrational transitions in the MIR and achieve a Q-factor of 1.0 x 10(6). To our knowledge, this is the highest Q reported in this wavelength range for any on-chip resonator. (C) 2015 Optical Society of America

引用

页码：4823 / 4826

页数：4

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