Growth and characterization of a high-quality Al0.45Ga0.55N layer with AlGaN/AlN superlattices

被引：0
|
作者：
Jeon, Seong-Ran [1 ]
Park, Si-Hyun [2 ]
机构：
[1] Korea Photon Technol Inst, LED Convergences Res Ctr, Kwangju 500779, South Korea
[2] Yeungnam Univ, Dept Elect Engn, Kyongsan 712749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 63卷 / 08期
关键词：
n-type AlGaN layer; High Al composition; AlGaN/AlN superlattices; THREADING-DISLOCATION-DENSITY; GAN; REDUCTION; FABRICATION; OVERGROWTH;
D O I：
10.3938/jkps.63.1625
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the growth and characterization of a Si-doped, n-type AlGaN layer with 45% Al composition. For the application of n-type AlGaN layers with high Al compositions in ultraviolet emitters, we fabricated an n-Al0.45Ga0.55N layer with high crystalline quality and high electrical conductivity by inserting Al0.85Ga0.15N/AlN superlattices (SLs) to prevent cracks prior to growing the n-type AlGaN layer. The dislocation density in the n-AlGaN layer with a 45% Al composition and SLs was less than 2.4 x 10(10) cm(-2), which was lower than the dislocation density of 5.3 x 10(10) cm(-2) for the n-AlGaN layer without SLs. The resistivity, mobility, and free-electron concentration in the n-type Al0.45Ga0.55N layer with SLs were 2.2 x 10(-2) Omega center dot cm, 55.0 cm(2)/V-s, and 5.0 x 10(18) cm(-3) at room temperature, respectively.
引用
收藏
页码：1625 / 1629
页数：5
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