Effects of Sr on the microstructure and electrical properties of (Co, Ta)-doped SnO2 varistors

被引:22
作者
Wang, JF [1 ]
Chen, HC [1 ]
Su, WB [1 ]
Zang, GZ [1 ]
Wang, B [1 ]
Gao, RW [1 ]
机构
[1] Shandong Univ, State Key Lab Crystal Mat, Sch Phys & Microelect, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
varistor; grain boundaries; electrical nonlinearity;
D O I
10.1016/j.jallcom.2005.05.041
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect on the microstructure and electrical properties of (Co, Ta)-doped SnO2 varistors upon the addition of SrCO3 was investigated. The threshold electric field of the SnO2-based varistors increased significantly from 318 to 3624 V/mm, the relative dielectric constants of the SnO2-based varistors decreased greatly from 1509 to 69 as SrCO3 concentration was increased up to 2.5 mol%. The significant decrease of the SnO2 grain size, from 8.19 to 1.03 mu m with increasing SrCO3 concentration over the range of 0-2.5 mol% is the origin for increase in the threshold voltage and decrease of the dielectric constants. The grain size reduction is attributed to the segregation of SrCO3 at grain boundaries hindering the SnO2 grains from conglomerating into large particles. Varistors were found to have superhigh threshold voltage and comparatively large nonlinear coefficient alpha. For 1.5 mol% SrCO3-doped sample, threshold electrical field E and nonlinear coefficient alpha were C measured to be 1738 V/mm and 23.7, for 2.0 mol% SrCO3-doped sample. E and a were 2204 V/mm and 24. and for 2.5 mol% SrCO3-doped sample, E and alpha were 3624 V/mm and 22. Superhigh threshold voltage and large nonlinear coefficient qualify the Sr-doped SnO2 varistor as an excellent candidate in use for high voltage protection system. The reasons why the grain resistivity of the SnO2-based varistors increased with increasing SrCO3 concentration and the boundary resistivity of the SnO2-based varistors gradually decreased with increasing SrCO3 concentration were explained. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:35 / 39
页数:5
相关论文
共 17 条
[1]   Nonlinear electrical behaviour of the SnO2•CoO•Ta2O5 system [J].
Antunes, AC ;
Antunes, SRM ;
Pianaro, SA ;
Rocha, MR ;
Longo, E ;
Varela, JA .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1998, 17 (07) :577-579
[2]   CHARACTERIZATION OF SPINEL PARTICLES IN ZINC-OXIDE VARISTORS [J].
ASOKAN, T ;
FREER, R .
JOURNAL OF MATERIALS SCIENCE, 1990, 25 (05) :2447-2453
[3]   Role of oxygen at the grain boundary of metal oxide varistors: A potential barrier formation mechanism [J].
Bueno, PR ;
Leite, ER ;
Oliveira, MM ;
Orlandi, MO ;
Longo, E .
APPLIED PHYSICS LETTERS, 2001, 79 (01) :48-50
[4]   Investigation of the electrical properties of SnO2 varistor system using impedance spectroscopy [J].
Bueno, PR ;
Pianaro, SA ;
Pereira, EC ;
Bulhoes, LOS ;
Longo, E ;
Varela, JA .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3700-3705
[5]  
Cerri JA, 1996, J AM CERAM SOC, V79, P799, DOI 10.1111/j.1151-2916.1996.tb07949.x
[6]   PHYSICS OF ZINC-OXIDE VARISTORS [J].
EMTAGE, PR .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4372-4384
[7]   APPLICATION OF ZINC-OXIDE VARISTORS [J].
GUPTA, TK .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (07) :1817-1840
[8]  
Kroger F.A, 1974, The Chemistry of Imperfect Crystals, V2
[9]   The influence of sintering process and atmosphere on the non-ohmic properties of SnO2 based varistor [J].
Leite, ER ;
Nascimento, AM ;
Bueno, PR ;
Longo, E ;
Varela, JA .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1999, 10 (04) :321-327
[10]   Investigation of electrical properties of SnO2•Co2O3•Sb2O3 varistor system [J].
Li, CP ;
Wang, JF ;
Su, WB ;
Chen, HC ;
Wang, WX ;
Zhuang, DX .
PHYSICA B-CONDENSED MATTER, 2001, 307 (1-4) :1-8