Temperature dependent transport properties and rectification in La0.7Sr0.3MnO3/La0.7Te0.3MnO3 p-n junctions

被引：2
|
作者：
Liu, Qi [1 ]
Miao, Jun [1 ]
Xu, Zedong [2 ]
Liu, Pengfei [1 ]
Meng, Kangkang [1 ]
Xu, Xiaoguang [1 ]
Wu, Yong [1 ]
Jiang, Yong [1 ]
机构：
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[2] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期
基金：
美国国家科学基金会; 国家重点研发计划;
关键词：
POLARIZATION; DIODE;
D O I：
10.7567/1882-0786/ab129d
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, we demonstrated the idea in a epitaxial heterostructure of La0.7Sr0.3Mn0.3/La0.7Te0.3MnO3 (LSMO/LTMO) which exhibited a related transition from a typical p-n junction (hole-electron) with remarkable diode effect as at low temperature to a p-p like junction (hole- small polaron) with a small rectification. Besides, the temperature dependence under positive and negative voltage bias exhibit inverse variation trends. These results are associated with the transition of major carrier with the rising temperature in LTMO. It indicates that the p-n junction with different dopping exhibit a variety of physical mechanisms for the further researches and applications. (C) 2019 The Japan Society of Applied Physics
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页数：6
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