1/f noise in proton-irradiated SiGeHBTs

被引：25
作者：
Jin, ZR [1 ]
Niu, GF
Cressler, JD
Marshall, CJ
Marshall, PW
Kim, HS
Reed, RA
Harame, DL
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
[3] Jackson & Tull Chartered Engineers, Washington, DC 20018 USA
[4] IBM Microelect, Essex Jct, VT 05401 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期
关键词：
1/f noise; proton irradiation; SiGe heterojunction bipolar transistor (HBT);
D O I：
10.1109/23.983203
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates the impact of proton irradiation on the 1/f noise in ultra-high-voltage chemical-vapor deposition SiGe heterojunction bipolar transistors. The relative degradation of 1/f noise shows a strong dependence on device geometry. Both the geometry dependence and the bias dependence of 1/f noise change significantly after exposure to 2 x 10(13) p/cm(2) protons. An expression describing the 1/f noise is derived and used to explain the experimental observations.
引用
收藏
页码：2244 / 2249
页数：6
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