Visible photoluminescence of Ge dots embedded in Si/SiO2 matrices

被引：31
作者：
Shklyaev, AA
Ichikawa, M
机构：
[1] ATP, JRCAT, Tsukuba, Ibaraki 3050046, Japan
[2] Natl Inst Adv Ind Sci & Technol, JRCAT, Tsukuba, Ibaraki 3050046, Japan
[3] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1138656, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期
关键词：
D O I：
10.1063/1.1451986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ge island formation on ultrathin SiO2 films enabled us to fabricate multilayer structures of Ge dots similar to6-7 nm in diameter and with an extremely high dot density of 2 x 10(12) cm(-2). Each dot had a boundary with the SiO2 film and a Si spacer layer. The multilayer structures exhibited photoluminescence (PL) with a maximum in the range of 2-3 eV depending on the excitation energy. The PL was associated with recombination between holes confined within Ge dots and electrons localized in the radiative defect centers at the Ge-dot/SiO2 interfaces. The results suggest that this recombination is much more effective than that at the Si/SiO2 interface and supported by the hole migration from the Si spacer layers to the Ge dots. (C) 2002 American Institute of Physics.
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页码：1432 / 1434
页数：3
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