Surface Potential Measurement of Organic Multi-layered Films on Electrodes by Kelvin Probe Force Microscopy

被引:3
|
作者
Satoh, Nobuo [1 ,2 ]
Katori, Shigetaka [1 ]
Kobayashi, Kei [3 ]
Matsushige, Kazumi [1 ]
Yamada, Hirofumi [1 ]
机构
[1] Kyoto Univ, Grad Sch Engn, Nishikyo Ku, Kyoto 6158510, Japan
[2] Chiba Inst Technol, Grad Sch Engn, Narashino, Chiba 2750016, Japan
[3] Kyoto Univ, Hakubi Ctr Adv Res, Nishikyo Ku, Kyoto 6158520, Japan
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2015年 / E98C卷 / 02期
关键词
dynamic force microscopy; Kelvin probe force microscopy; metal-shadow-mask deposition; organic light emitting diode; ENERGY-LEVEL ALIGNMENT; WORK FUNCTION; INTERFACES; METAL; INJECTION; BARRIER; DEVICES;
D O I
10.1587/transele.E98.C.91
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated both the film thickness and surface potential of organic semiconductors deposited on two kinds of electrodes by the simultaneous observation with the dynamic force microscopy (DFM)/Kelvin-probe force microscope (KFM). To clarify the interfacial properties of organic semiconductor, we fabricated samples that imitated the organic light emitting diode (OLED) structure by depositing bis [N, N'-(1-naphthyl)-N,N'-phenyl] benzidine (alpha-NPD) and tris (8-hydroxyquinolinato) aluminum (Alq(3)), respectively, on indium-tin-oxide (ITO) as anode and aluminum (Al) as cathode by the vacuum evaporation deposition using intersecting metal shadow masks. This deposition technique enables us to fabricate four different areas in the same substrate. The crossover area of the deposited thin films were measured by the DFM/KFM, the energy band diagrams were depicted and we considered that the charge behavior of the organic semiconductor depended on the material and the structure.
引用
收藏
页码:91 / 97
页数:7
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